Study on enhancing the thermoelectric properties of Ti2CrSn alloys

Guangfa Yu; Shihao Song; Yanwei Ren; Jia Guo; Liqin Yan; Zunming Lu; Jun Shen

doi:10.3390/met11101503

Study on enhancing the thermoelectric properties of Ti2CrSn alloys

Guangfa Yu, Shihao Song, Yanwei Ren, Jia Guo, Liqin Yan^*, Zunming Lu^*, Jun Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Based on the Hg₂ CuTi structure, the full-Heusler alloy Ti₂ CrSn, with a ground state band gap of semiconductor, is a thermoelectric material with potential applications. Through preparing Ti₂ CrSn_1−x Al_x (x = 0, 0.05, 0.1, 0.15, 0.2) series bulk materials via arc melting, the effects of the electrical and thermal transport properties of Ti₂ CrSn series alloys were investigated, and different Al doping on the phase structure, the microscopic morphology, and the thermoelectric properties of Ti₂ CrSn were examined. The results show that the materials all exhibit characteristics of p-type semiconductors at the temperature range of 323 to 923 K. Al elemental doping can significantly increase the Seebeck coefficient and reduce the thermal conductivity of the materials. Among them, the sample Ti₂ CrSn_0.8 Al_0.2 obtained a maximum value of 5.03 × 10⁻³ for the thermoelectric optimal ZT value at 723 K, which is 3.6 times higher than that of Ti₂ CrSn.

Original language	English
Article number	1503
Journal	Metals
Volume	11
Issue number	10
DOIs	https://doi.org/10.3390/met11101503
Publication status	Published - Oct 2021
Externally published	Yes

Keywords

Full-Heusler
Thermoelectric properties
Ti CrSn Al

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10.3390/met11101503

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@article{2093140e02c64821b76afe740d43a941,

title = "Study on enhancing the thermoelectric properties of Ti2CrSn alloys",

abstract = "Based on the Hg2 CuTi structure, the full-Heusler alloy Ti2 CrSn, with a ground state band gap of semiconductor, is a thermoelectric material with potential applications. Through preparing Ti2 CrSn1−x Alx (x = 0, 0.05, 0.1, 0.15, 0.2) series bulk materials via arc melting, the effects of the electrical and thermal transport properties of Ti2 CrSn series alloys were investigated, and different Al doping on the phase structure, the microscopic morphology, and the thermoelectric properties of Ti2 CrSn were examined. The results show that the materials all exhibit characteristics of p-type semiconductors at the temperature range of 323 to 923 K. Al elemental doping can significantly increase the Seebeck coefficient and reduce the thermal conductivity of the materials. Among them, the sample Ti2 CrSn0.8 Al0.2 obtained a maximum value of 5.03 × 10−3 for the thermoelectric optimal ZT value at 723 K, which is 3.6 times higher than that of Ti2 CrSn.",

keywords = "Full-Heusler, Thermoelectric properties, Ti CrSn Al",

author = "Guangfa Yu and Shihao Song and Yanwei Ren and Jia Guo and Liqin Yan and Zunming Lu and Jun Shen",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = oct,

doi = "10.3390/met11101503",

language = "English",

volume = "11",

journal = "Metals",

issn = "2075-4701",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "10",

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TY - JOUR

T1 - Study on enhancing the thermoelectric properties of Ti2CrSn alloys

AU - Yu, Guangfa

AU - Song, Shihao

AU - Ren, Yanwei

AU - Guo, Jia

AU - Yan, Liqin

AU - Lu, Zunming

AU - Shen, Jun

PY - 2021/10

Y1 - 2021/10

N2 - Based on the Hg2 CuTi structure, the full-Heusler alloy Ti2 CrSn, with a ground state band gap of semiconductor, is a thermoelectric material with potential applications. Through preparing Ti2 CrSn1−x Alx (x = 0, 0.05, 0.1, 0.15, 0.2) series bulk materials via arc melting, the effects of the electrical and thermal transport properties of Ti2 CrSn series alloys were investigated, and different Al doping on the phase structure, the microscopic morphology, and the thermoelectric properties of Ti2 CrSn were examined. The results show that the materials all exhibit characteristics of p-type semiconductors at the temperature range of 323 to 923 K. Al elemental doping can significantly increase the Seebeck coefficient and reduce the thermal conductivity of the materials. Among them, the sample Ti2 CrSn0.8 Al0.2 obtained a maximum value of 5.03 × 10−3 for the thermoelectric optimal ZT value at 723 K, which is 3.6 times higher than that of Ti2 CrSn.

AB - Based on the Hg2 CuTi structure, the full-Heusler alloy Ti2 CrSn, with a ground state band gap of semiconductor, is a thermoelectric material with potential applications. Through preparing Ti2 CrSn1−x Alx (x = 0, 0.05, 0.1, 0.15, 0.2) series bulk materials via arc melting, the effects of the electrical and thermal transport properties of Ti2 CrSn series alloys were investigated, and different Al doping on the phase structure, the microscopic morphology, and the thermoelectric properties of Ti2 CrSn were examined. The results show that the materials all exhibit characteristics of p-type semiconductors at the temperature range of 323 to 923 K. Al elemental doping can significantly increase the Seebeck coefficient and reduce the thermal conductivity of the materials. Among them, the sample Ti2 CrSn0.8 Al0.2 obtained a maximum value of 5.03 × 10−3 for the thermoelectric optimal ZT value at 723 K, which is 3.6 times higher than that of Ti2 CrSn.

KW - Full-Heusler

KW - Thermoelectric properties

KW - Ti CrSn Al

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U2 - 10.3390/met11101503

DO - 10.3390/met11101503

M3 - Article

AN - SCOPUS:85115388135

SN - 2075-4701

VL - 11

JO - Metals

JF - Metals

IS - 10

M1 - 1503

ER -

Study on enhancing the thermoelectric properties of Ti2CrSn alloys

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Keywords

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