Study on Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic with low dielectric loss and high tunability

Xi Lin Wang; Yong Jie Zhao; Yu Zhen Zhao; Zhi Dong Jia; He Ping Zhou

Study on Ba_0.6Sr_0.4(Zr_0.2Sn_xTi_0.8-x)O₃ ceramic with low dielectric loss and high tunability

Xi Lin Wang, Yong Jie Zhao, Yu Zhen Zhao, Zhi Dong Jia, He Ping Zhou

School of Material Science and Engineering

Tsinghua University

Research output: Contribution to journal › Article › peer-review

Abstract

Ba_0.6Sr_0.4(Zr_0.2Sn_xTi_0.8-x)O₃ ceramics were obtained by ceramic sintering processing. The results show that Ba_0.6Sr_0.4(Zr_0.2Sn_xTi_0.8-x)O₃ ceramic is a promising candidate for the DC electric field tunable materials, because they exhibit high relative dielectric tunability 27.9% (x=0.03) at 1.5 kV/mm, low dielectric constant <2000 (when x>0.01), and very low dielectric loss 0.00010 (x=0.05) at 100 kHz and room temperature. X-ray diffraction analyses indicates that the samples present perovskite phase.

Original language	English
Pages (from-to)	3056-3059
Number of pages	4
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	44
Issue number	11
Publication status	Published - 1 Nov 2015

Keywords

BST ceramic
Solid solubility
Tunability

Cite this

@article{4ee51427318540a4ace641c86ebd459c,

title = "Study on Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic with low dielectric loss and high tunability",

abstract = "Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramics were obtained by ceramic sintering processing. The results show that Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic is a promising candidate for the DC electric field tunable materials, because they exhibit high relative dielectric tunability 27.9% (x=0.03) at 1.5 kV/mm, low dielectric constant <2000 (when x>0.01), and very low dielectric loss 0.00010 (x=0.05) at 100 kHz and room temperature. X-ray diffraction analyses indicates that the samples present perovskite phase.",

keywords = "BST ceramic, Solid solubility, Tunability",

author = "Wang, {Xi Lin} and Zhao, {Yong Jie} and Zhao, {Yu Zhen} and Jia, {Zhi Dong} and Zhou, {He Ping}",

year = "2015",

month = nov,

day = "1",

language = "English",

volume = "44",

pages = "3056--3059",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "11",

}

TY - JOUR

T1 - Study on Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic with low dielectric loss and high tunability

AU - Wang, Xi Lin

AU - Zhao, Yong Jie

AU - Zhao, Yu Zhen

AU - Jia, Zhi Dong

AU - Zhou, He Ping

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramics were obtained by ceramic sintering processing. The results show that Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic is a promising candidate for the DC electric field tunable materials, because they exhibit high relative dielectric tunability 27.9% (x=0.03) at 1.5 kV/mm, low dielectric constant <2000 (when x>0.01), and very low dielectric loss 0.00010 (x=0.05) at 100 kHz and room temperature. X-ray diffraction analyses indicates that the samples present perovskite phase.

AB - Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramics were obtained by ceramic sintering processing. The results show that Ba0.6Sr0.4(Zr0.2SnxTi0.8-x)O3 ceramic is a promising candidate for the DC electric field tunable materials, because they exhibit high relative dielectric tunability 27.9% (x=0.03) at 1.5 kV/mm, low dielectric constant <2000 (when x>0.01), and very low dielectric loss 0.00010 (x=0.05) at 100 kHz and room temperature. X-ray diffraction analyses indicates that the samples present perovskite phase.

KW - BST ceramic

KW - Solid solubility

KW - Tunability

UR - http://www.scopus.com/inward/record.url?scp=84951749391&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84951749391

SN - 1000-985X

VL - 44

SP - 3056

EP - 3059

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 11

ER -

Study on Ba_0.6Sr_0.4(Zr_0.2Sn_xTi_0.8-x)O₃ ceramic with low dielectric loss and high tunability

Abstract

Keywords

Other files and links

Fingerprint

Cite this