TY - GEN
T1 - Study on a novel MEMS high g acceleration sensor
AU - Li, Ping
AU - Shi, Yun Bo
AU - Liu, Jun
AU - Gao, Shi Qiao
PY - 2012
Y1 - 2012
N2 - In this paper, a novel micro high g acceleration sensor based on piezoresistor effect is designed and fabricated to be a four-beam-mass structure, and a piezoresistor-Wheatstone bridge measurement circuit is established to obtain the signal of impulse load. A measurement system based on Hopkinson is established to test the basic characteristic of this micro high g acceleration sensor. According to the experimental results, the sensitivity of the high g acceleration sensor is 0.71uV/g at the impact load of 100,000.8g.
AB - In this paper, a novel micro high g acceleration sensor based on piezoresistor effect is designed and fabricated to be a four-beam-mass structure, and a piezoresistor-Wheatstone bridge measurement circuit is established to obtain the signal of impulse load. A measurement system based on Hopkinson is established to test the basic characteristic of this micro high g acceleration sensor. According to the experimental results, the sensitivity of the high g acceleration sensor is 0.71uV/g at the impact load of 100,000.8g.
KW - Fabrication
KW - MEMS high-g acceleration sensor
KW - Piezoresistance effect
KW - Test
UR - http://www.scopus.com/inward/record.url?scp=84859185102&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.490-495.499
DO - 10.4028/www.scientific.net/AMR.490-495.499
M3 - Conference contribution
AN - SCOPUS:84859185102
SN - 9783037853849
T3 - Advanced Materials Research
SP - 499
EP - 503
BT - Mechatronics and Intelligent Materials II
T2 - 2nd International Conference on Mechatronics and Intelligent Materials 2012, MIM 2012
Y2 - 18 May 2012 through 19 May 2012
ER -