Abstract
In this paper, a novel micro high g acceleration sensor based on piezoresistor effect is designed and fabricated to be a four-beam-mass structure, and a piezoresistor-Wheatstone bridge measurement circuit is established to obtain the signal of impulse load. A measurement system based on Hopkinson is established to test the basic characteristic of this micro high g acceleration sensor. According to the experimental results, the sensitivity of the high g acceleration sensor is 0.71uV/g at the impact load of 100,000.8g.
| Original language | English |
|---|---|
| Title of host publication | Mechatronics and Intelligent Materials II |
| Pages | 499-503 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2nd International Conference on Mechatronics and Intelligent Materials 2012, MIM 2012 - GuiLin, China Duration: 18 May 2012 → 19 May 2012 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 490-495 |
| ISSN (Print) | 1022-6680 |
Conference
| Conference | 2nd International Conference on Mechatronics and Intelligent Materials 2012, MIM 2012 |
|---|---|
| Country/Territory | China |
| City | GuiLin |
| Period | 18/05/12 → 19/05/12 |
Keywords
- Fabrication
- MEMS high-g acceleration sensor
- Piezoresistance effect
- Test
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Li, P., Shi, Y. B., Liu, J., & Gao, S. Q. (2012). Study on a novel MEMS high g acceleration sensor. In Mechatronics and Intelligent Materials II (pp. 499-503). (Advanced Materials Research; Vol. 490-495). https://doi.org/10.4028/www.scientific.net/AMR.490-495.499