Abstract
The electrical and structural properties of C60/Sb bilayers were investigated. In situ direct-current conductivity measurement results indicate that the doping of Sb into C60 induces the C60 order-disorder phase transition temperature to increase to ∼278 K. According to the results of a transmission electron microscope and atomic force microscope study, such a transition (near 278 K) implies the formation of an interfacial structure of Sb-doped C60. Annealing and the absorption of gases destroy the interfacial structure of Sb-doped C60. A possible mechanism for such a phase transition is discussed.
Original language | English |
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Pages (from-to) | 3987-4000 |
Number of pages | 14 |
Journal | Journal of Physics Condensed Matter |
Volume | 13 |
Issue number | 18 |
DOIs | |
Publication status | Published - 7 May 2001 |
Externally published | Yes |