Study of the conductance and structure characteristics of C60/Sb bilayers

Xiang Li*, H. Wang, W. N. Wang, Y. J. Tang, H. W. Zhao, W. S. Zhan, J. G. Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The electrical and structural properties of C60/Sb bilayers were investigated. In situ direct-current conductivity measurement results indicate that the doping of Sb into C60 induces the C60 order-disorder phase transition temperature to increase to ∼278 K. According to the results of a transmission electron microscope and atomic force microscope study, such a transition (near 278 K) implies the formation of an interfacial structure of Sb-doped C60. Annealing and the absorption of gases destroy the interfacial structure of Sb-doped C60. A possible mechanism for such a phase transition is discussed.

Original languageEnglish
Pages (from-to)3987-4000
Number of pages14
JournalJournal of Physics Condensed Matter
Volume13
Issue number18
DOIs
Publication statusPublished - 7 May 2001
Externally publishedYes

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