Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Kun Xue, Li Sha Niu*, Hui Ji Shi, Jiwen Liu

*Corresponding author for this work

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Abstract

Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 °C or 1100 °C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied.

Original languageEnglish
Pages (from-to)3855-3861
Number of pages7
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - 30 Apr 2008
Externally publishedYes

Keywords

  • Recrystallization
  • SiC thin films
  • Structural relaxation
  • Thermal annealing

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Xue, K., Niu, L. S., Shi, H. J., & Liu, J. (2008). Structural relaxation of amorphous silicon carbide thin films in thermal annealing. Thin Solid Films, 516(12), 3855-3861. https://doi.org/10.1016/j.tsf.2007.06.194