Abstract
Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 °C or 1100 °C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied.
Original language | English |
---|---|
Pages (from-to) | 3855-3861 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 12 |
DOIs | |
Publication status | Published - 30 Apr 2008 |
Externally published | Yes |
Keywords
- Recrystallization
- SiC thin films
- Structural relaxation
- Thermal annealing