Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure

Weilin Zhao; Jingxue Du; Lijie Shi

doi:10.1016/j.physleta.2024.130046

Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure

Weilin Zhao, Jingxue Du, Lijie Shi^*

^*Corresponding author for this work

School of Physics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

By first-principles method, the electronic and optical properties of stable GeTe/SnSe van der Waals heterostructure under strain have been investigated. By applying uniaxial and biaxial strain, the bandgap and band alignment of this heterostructure can be controlled, and semiconductor-metal phase transition is observed. By applying biaxial strain, the optical absorption of the heterostructure can be improved, and the power conversion efficiency can be improved from 13% to 19%. The easily controlled electronic properties and good optical properties make GeTe/SnSe van der Waals heterostructure to be a promising material in optoelectronic and solar energy conversion devices.

Original language	English
Article number	130046
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	528
DOIs	https://doi.org/10.1016/j.physleta.2024.130046
Publication status	Published - 28 Dec 2024

Keywords

Electronic properties
First-principles method
Heterostructure
Optical properties
Strain

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10.1016/j.physleta.2024.130046

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title = "Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure",

abstract = "By first-principles method, the electronic and optical properties of stable GeTe/SnSe van der Waals heterostructure under strain have been investigated. By applying uniaxial and biaxial strain, the bandgap and band alignment of this heterostructure can be controlled, and semiconductor-metal phase transition is observed. By applying biaxial strain, the optical absorption of the heterostructure can be improved, and the power conversion efficiency can be improved from 13% to 19%. The easily controlled electronic properties and good optical properties make GeTe/SnSe van der Waals heterostructure to be a promising material in optoelectronic and solar energy conversion devices.",

keywords = "Electronic properties, First-principles method, Heterostructure, Optical properties, Strain",

author = "Weilin Zhao and Jingxue Du and Lijie Shi",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier B.V.",

year = "2024",

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day = "28",

doi = "10.1016/j.physleta.2024.130046",

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journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

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T1 - Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure

AU - Zhao, Weilin

AU - Du, Jingxue

AU - Shi, Lijie

PY - 2024/12/28

Y1 - 2024/12/28

N2 - By first-principles method, the electronic and optical properties of stable GeTe/SnSe van der Waals heterostructure under strain have been investigated. By applying uniaxial and biaxial strain, the bandgap and band alignment of this heterostructure can be controlled, and semiconductor-metal phase transition is observed. By applying biaxial strain, the optical absorption of the heterostructure can be improved, and the power conversion efficiency can be improved from 13% to 19%. The easily controlled electronic properties and good optical properties make GeTe/SnSe van der Waals heterostructure to be a promising material in optoelectronic and solar energy conversion devices.

AB - By first-principles method, the electronic and optical properties of stable GeTe/SnSe van der Waals heterostructure under strain have been investigated. By applying uniaxial and biaxial strain, the bandgap and band alignment of this heterostructure can be controlled, and semiconductor-metal phase transition is observed. By applying biaxial strain, the optical absorption of the heterostructure can be improved, and the power conversion efficiency can be improved from 13% to 19%. The easily controlled electronic properties and good optical properties make GeTe/SnSe van der Waals heterostructure to be a promising material in optoelectronic and solar energy conversion devices.

KW - Electronic properties

KW - First-principles method

KW - Heterostructure

KW - Optical properties

KW - Strain

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U2 - 10.1016/j.physleta.2024.130046

DO - 10.1016/j.physleta.2024.130046

M3 - Article

AN - SCOPUS:85209389520

SN - 0375-9601

VL - 528

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

M1 - 130046

ER -

Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure

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Keywords

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