Abstract
On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.
| Original language | English |
|---|---|
| Pages (from-to) | 653-654 |
| Number of pages | 2 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States Duration: 25 Apr 2004 → 29 Apr 2004 |
Keywords
- MOS switch
- Passive mixer
- Soft breakdown