Soft breakdown effects on MOS switch and passive mixer

Anwar Sadat; Yi Liu; Jiann Yuan; Huikai Xie

doi:10.1109/RELPHY.2004.1315435

Soft breakdown effects on MOS switch and passive mixer

Anwar Sadat, Yi Liu, Jiann Yuan, Huikai Xie

Research output: Contribution to journal › Conference article › peer-review

Abstract

On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

Original language	English
Article number	1315435
Pages (from-to)	653-654
Number of pages	2
Journal	IEEE International Reliability Physics Symposium Proceedings
Volume	2004-January
Issue number	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315435
Publication status	Published - 2004
Externally published	Yes
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 25 Apr 2004 → 29 Apr 2004

Keywords

MOS switch
Passive mixer
Soft breakdown

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10.1109/RELPHY.2004.1315435

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title = "Soft breakdown effects on MOS switch and passive mixer",

abstract = "On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.",

keywords = "MOS switch, Passive mixer, Soft breakdown",

author = "Anwar Sadat and Yi Liu and Jiann Yuan and Huikai Xie",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 ; Conference date: 25-04-2004 Through 29-04-2004",

year = "2004",

doi = "10.1109/RELPHY.2004.1315435",

language = "English",

volume = "2004-January",

pages = "653--654",

journal = "IEEE International Reliability Physics Symposium Proceedings",

issn = "1541-7026",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "January",

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TY - JOUR

T1 - Soft breakdown effects on MOS switch and passive mixer

AU - Sadat, Anwar

AU - Liu, Yi

AU - Yuan, Jiann

AU - Xie, Huikai

PY - 2004

Y1 - 2004

N2 - On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

AB - On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

KW - MOS switch

KW - Passive mixer

KW - Soft breakdown

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U2 - 10.1109/RELPHY.2004.1315435

DO - 10.1109/RELPHY.2004.1315435

M3 - Conference article

AN - SCOPUS:84932124224

SN - 1541-7026

VL - 2004-January

SP - 653

EP - 654

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

IS - January

M1 - 1315435

T2 - 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004

Y2 - 25 April 2004 through 29 April 2004

ER -

Soft breakdown effects on MOS switch and passive mixer

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Keywords

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