Silicane as an inert substrate of silicene: A promising candidate for FET

Run Wu Zhang; Chang Wen Zhang; Wei Xiao Ji; Shu Jun Hu; Shi Shen Yan; Sheng Shi Li; Ping Li; Pei Ji Wang; Yu Shen Liu

doi:10.1021/jp508253x

Silicane as an inert substrate of silicene: A promising candidate for FET

Run Wu Zhang, Chang Wen Zhang^*, Wei Xiao Ji, Shu Jun Hu, Shi Shen Yan, Sheng Shi Li, Ping Li, Pei Ji Wang, Yu Shen Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Opening up a band gap without lowering high carrier mobility and finding a suitable substrate material are a challenge for designing silicon-based nanodevices. Using density functional theory calculations incorporating vdW corrections, we find that the semiconducting silicane monolayer is free of dangling bonds, providing an ideal substrate for silicene to sit on. The nearly linear band dispersion character of silicene with a sizable band gap (44-61 meV) opening is obtained in all heterobilayers (HBLs). We also find that the effective masses of electrons and holes near the Dirac point (ranging from 0.033 to 0.045m₀) are very small in HBLs, and thus high carrier mobility (10⁵cm² V^-1 s^-1) of silicene is expected. These characteristics of HBLs can be flexibly modulated by applying bias voltage or strain, suitable for the high-performance FET channel operating at room temperature.

Original language	English
Pages (from-to)	25278-25283
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	43
DOIs	https://doi.org/10.1021/jp508253x
Publication status	Published - 30 Oct 2014
Externally published	Yes

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title = "Silicane as an inert substrate of silicene: A promising candidate for FET",

abstract = "Opening up a band gap without lowering high carrier mobility and finding a suitable substrate material are a challenge for designing silicon-based nanodevices. Using density functional theory calculations incorporating vdW corrections, we find that the semiconducting silicane monolayer is free of dangling bonds, providing an ideal substrate for silicene to sit on. The nearly linear band dispersion character of silicene with a sizable band gap (44-61 meV) opening is obtained in all heterobilayers (HBLs). We also find that the effective masses of electrons and holes near the Dirac point (ranging from 0.033 to 0.045m0) are very small in HBLs, and thus high carrier mobility (105cm2 V-1 s-1) of silicene is expected. These characteristics of HBLs can be flexibly modulated by applying bias voltage or strain, suitable for the high-performance FET channel operating at room temperature.",

author = "Zhang, {Run Wu} and Zhang, {Chang Wen} and Ji, {Wei Xiao} and Hu, {Shu Jun} and Yan, {Shi Shen} and Li, {Sheng Shi} and Ping Li and Wang, {Pei Ji} and Liu, {Yu Shen}",

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doi = "10.1021/jp508253x",

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TY - JOUR

T1 - Silicane as an inert substrate of silicene

T2 - A promising candidate for FET

AU - Zhang, Run Wu

AU - Zhang, Chang Wen

AU - Ji, Wei Xiao

AU - Hu, Shu Jun

AU - Yan, Shi Shen

AU - Li, Sheng Shi

AU - Li, Ping

AU - Wang, Pei Ji

AU - Liu, Yu Shen

PY - 2014/10/30

Y1 - 2014/10/30

N2 - Opening up a band gap without lowering high carrier mobility and finding a suitable substrate material are a challenge for designing silicon-based nanodevices. Using density functional theory calculations incorporating vdW corrections, we find that the semiconducting silicane monolayer is free of dangling bonds, providing an ideal substrate for silicene to sit on. The nearly linear band dispersion character of silicene with a sizable band gap (44-61 meV) opening is obtained in all heterobilayers (HBLs). We also find that the effective masses of electrons and holes near the Dirac point (ranging from 0.033 to 0.045m0) are very small in HBLs, and thus high carrier mobility (105cm2 V-1 s-1) of silicene is expected. These characteristics of HBLs can be flexibly modulated by applying bias voltage or strain, suitable for the high-performance FET channel operating at room temperature.

AB - Opening up a band gap without lowering high carrier mobility and finding a suitable substrate material are a challenge for designing silicon-based nanodevices. Using density functional theory calculations incorporating vdW corrections, we find that the semiconducting silicane monolayer is free of dangling bonds, providing an ideal substrate for silicene to sit on. The nearly linear band dispersion character of silicene with a sizable band gap (44-61 meV) opening is obtained in all heterobilayers (HBLs). We also find that the effective masses of electrons and holes near the Dirac point (ranging from 0.033 to 0.045m0) are very small in HBLs, and thus high carrier mobility (105cm2 V-1 s-1) of silicene is expected. These characteristics of HBLs can be flexibly modulated by applying bias voltage or strain, suitable for the high-performance FET channel operating at room temperature.

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SP - 25278

EP - 25283

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 43

ER -

Silicane as an inert substrate of silicene: A promising candidate for FET

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