TY - JOUR
T1 - Sign changes of intrinsic spin hall effect in semiconductors and simple metals
T2 - First-principles calculations
AU - Yao, Y.
AU - Fang, Z.
PY - 2005/10/7
Y1 - 2005/10/7
N2 - First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish the effect from the extrinsic one. The calculated ISHC in n-doped GaAs can be well compared with experiment, and it differs from the sign obtained from the extrinsic effect. On the other hand, the ISHC in W and Au, which shows opposite sign, respectively, is robust and not sensitive to the disorder.
AB - First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish the effect from the extrinsic one. The calculated ISHC in n-doped GaAs can be well compared with experiment, and it differs from the sign obtained from the extrinsic effect. On the other hand, the ISHC in W and Au, which shows opposite sign, respectively, is robust and not sensitive to the disorder.
UR - http://www.scopus.com/inward/record.url?scp=28844462493&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.95.156601
DO - 10.1103/PhysRevLett.95.156601
M3 - Article
AN - SCOPUS:28844462493
SN - 0031-9007
VL - 95
JO - Physical Review Letters
JF - Physical Review Letters
IS - 15
M1 - 156601
ER -