Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration

Zhengyi He; Shan Zhang; Li Zheng; Zhiduo Liu; Guanglin Zhang; Huijuan Wu; Bingkun Wang; Zhongyu Liu; Zhiwen Jin; Gang Wang

doi:10.1109/LED.2022.3203474

Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration

Zhengyi He, Shan Zhang, Li Zheng, Zhiduo Liu, Guanglin Zhang, Huijuan Wu, Bingkun Wang, Zhongyu Liu, Zhiwen Jin, Gang Wang^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Here, we have fabricated high-performance near-infrared (NIR) tunnelling heterojunction photodetectors (THPDs) by in-situ synthesizing three-dimensional (3D) graphene on Si with the insertion of a high-κ tunnelling layer. Combining the high light-harvesting ability of 3D-graphene and the effective dark current suppression of the high-κ tunnelling layer, the trade-off between the ultrafast response and ultra-sensitivity in graphene-based PDs is successfully bridged. Our device exhibits ultra-high responsivity (11.2 A/W), excellent specific detectivity (5.9 ×10 ¹⁰ Jones), and ultra-fast response (168 μs) at the communication wavelength (1550 nm). This work provides a universal strategy to fabricate high-performance and low-cost graphene/silicon PDs in the communication wavelength.

Original language	English
Pages (from-to)	1818-1821
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	11
DOIs	https://doi.org/10.1109/LED.2022.3203474
Publication status	Published - 1 Nov 2022

Keywords

3D-graphene
NIR tunnelling photodetector
interfacial engineering

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title = "Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration",

abstract = "Here, we have fabricated high-performance near-infrared (NIR) tunnelling heterojunction photodetectors (THPDs) by in-situ synthesizing three-dimensional (3D) graphene on Si with the insertion of a high-κ tunnelling layer. Combining the high light-harvesting ability of 3D-graphene and the effective dark current suppression of the high-κ tunnelling layer, the trade-off between the ultrafast response and ultra-sensitivity in graphene-based PDs is successfully bridged. Our device exhibits ultra-high responsivity (11.2 A/W), excellent specific detectivity (5.9 ×10 10 Jones), and ultra-fast response (168 μs) at the communication wavelength (1550 nm). This work provides a universal strategy to fabricate high-performance and low-cost graphene/silicon PDs in the communication wavelength.",

keywords = "3D-graphene, NIR tunnelling photodetector, interfacial engineering",

author = "Zhengyi He and Shan Zhang and Li Zheng and Zhiduo Liu and Guanglin Zhang and Huijuan Wu and Bingkun Wang and Zhongyu Liu and Zhiwen Jin and Gang Wang",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

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doi = "10.1109/LED.2022.3203474",

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AU - He, Zhengyi

AU - Zhang, Shan

AU - Zheng, Li

AU - Liu, Zhiduo

AU - Zhang, Guanglin

AU - Wu, Huijuan

AU - Wang, Bingkun

AU - Liu, Zhongyu

AU - Jin, Zhiwen

AU - Wang, Gang

PY - 2022/11/1

Y1 - 2022/11/1

N2 - Here, we have fabricated high-performance near-infrared (NIR) tunnelling heterojunction photodetectors (THPDs) by in-situ synthesizing three-dimensional (3D) graphene on Si with the insertion of a high-κ tunnelling layer. Combining the high light-harvesting ability of 3D-graphene and the effective dark current suppression of the high-κ tunnelling layer, the trade-off between the ultrafast response and ultra-sensitivity in graphene-based PDs is successfully bridged. Our device exhibits ultra-high responsivity (11.2 A/W), excellent specific detectivity (5.9 ×10 10 Jones), and ultra-fast response (168 μs) at the communication wavelength (1550 nm). This work provides a universal strategy to fabricate high-performance and low-cost graphene/silicon PDs in the communication wavelength.

AB - Here, we have fabricated high-performance near-infrared (NIR) tunnelling heterojunction photodetectors (THPDs) by in-situ synthesizing three-dimensional (3D) graphene on Si with the insertion of a high-κ tunnelling layer. Combining the high light-harvesting ability of 3D-graphene and the effective dark current suppression of the high-κ tunnelling layer, the trade-off between the ultrafast response and ultra-sensitivity in graphene-based PDs is successfully bridged. Our device exhibits ultra-high responsivity (11.2 A/W), excellent specific detectivity (5.9 ×10 10 Jones), and ultra-fast response (168 μs) at the communication wavelength (1550 nm). This work provides a universal strategy to fabricate high-performance and low-cost graphene/silicon PDs in the communication wavelength.

KW - 3D-graphene

KW - NIR tunnelling photodetector

KW - interfacial engineering

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DO - 10.1109/LED.2022.3203474

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SN - 0741-3106

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SP - 1818

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration

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Keywords

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