Abstract
Atomically flat thin films of topological semimetal Na3 Bi are grown on double-layer graphene formed on 6H-SiC(0001) substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for Na3 Bi thin films on double-layer graphene are successfully established. The band structure of Na3 Bi grown on graphene is mapped along Γ-M and Γ-K directions. Furthermore, the energy band of Na3 Bi at higher energy is uncovered by doping Cs atoms on the surface.
Original language | English |
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Article number | 116802 |
Journal | Chinese Physics Letters |
Volume | 31 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2014 |
Externally published | Yes |