Schottky diodes with the cutoff frequency of 2.6 THz and its applications in focal imaging array

Jin Chao Mou*, Ming Ming Xu, Ling Chen, Zhi Ming Wang, Wei Hua Yu, Xin Lv

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

This paper presents some critical techniques of the terahertz focal imaging system. As the key nonlinear devices in the focal plane array, the Schottky diodes with the cutoff frequency of 2.6 THz are designed and fabricated. Based on the Schottky diodes, the quasi-optical mixers are designed and realized using the GaAs Schottky diode process, which consists of the planar antennas on chip, the Schottky diodes and high resistivity lens. According to the Nyquist sampling theorem, a 220 GHz 1x6 focal plane array is designed and analyzed.

Original languageEnglish
Title of host publication2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Pages807-810
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen, China
Duration: 5 May 20128 May 2012

Publication series

Name2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Volume2

Conference

Conference2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Country/TerritoryChina
CityShenzhen
Period5/05/128/05/12

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