Robust Hot Electron and Multiple Topological Insulator States in PtBi2

Xiao Ang Nie, Shujing Li, Meng Yang, Zhen Zhu, Hao Ke Xu, Xu Yang, Fawei Zheng, Dandan Guan, Shiyong Wang, Yao Yi Li, Canhua Liu, Jian Li, Ping Zhang, Youguo Shi, Hao Zheng*, Jinfeng Jia

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

A two-dimensional topological insulator features (only) one bulk gap with nontrivial topology, which protects one-dimensional boundary states at the Fermi level. We find a quantum phase of matter beyond this category: a multiple topological insulator. It possesses a ladder of topological gaps; each gap protects a robust edge state. We prove a monolayer of van der Waals material PtBi2 as a two-dimensional multiple topological insulator. By means of scanning tunneling spectroscopy, we directly visualize the one-dimensional hot electron (and hole) channels with nanometer size on the samples. Furthermore, we confirm the topological protection of these channels by directly demonstrating their robustness to variations of crystal orientation, edge geometry, and sample temperature. The discovered topological hot electron materials may be applied as efficient photocatalysts in the future.

Original languageEnglish
Pages (from-to)2366-2372
Number of pages7
JournalACS Nano
Volume14
Issue number2
DOIs
Publication statusPublished - 25 Feb 2020
Externally publishedYes

Keywords

  • 2D materials
  • edge state
  • hot electron
  • scanning tunneling microscopy
  • topological insulator

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