Research of CMOS amplifier radiation harden circuit design technology

As CMOS amplifier radiation harden circuit has been more and more utilized in the domain of aerospace. For the purpose of better researching characteristics of efficacy-losing the CMOS amplifier radiation harden circuit radiated in the space, meeting the requirement of radiation hardening in the way of designing new CMOS amplifier radiation harden circuit. The new radiation harden differential circuit structure design and hardened layout design was carried out with treatment, which was applied in CMOS amplifier radiation harden circuit, and solved the CMOS semiconductor components of threshold voltage deviation, transdiode decreasing, substrate leakage current increasing. The resulted showed that the 1/f noise of CMOS amplifier radiation harden circuit decreased enormously with the new design method. The result of the present work implied that with CMOS integrated circuit design to harden, the radiation hardening has been achieve.