TY - JOUR
T1 - Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials
AU - Huang, Yuan
AU - Sutter, Eli
AU - Shi, Norman N.
AU - Zheng, Jiabao
AU - Yang, Tianzhong
AU - Englund, Dirk
AU - Gao, Hong Jun
AU - Sutter, Peter
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/11/24
Y1 - 2015/11/24
N2 - Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of 4000 and 12 000 cm2/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.
AB - Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of 4000 and 12 000 cm2/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.
KW - 2D materials
KW - exfoliation
KW - graphene
KW - processing
KW - van der Waals force
UR - http://www.scopus.com/inward/record.url?scp=84948406884&partnerID=8YFLogxK
U2 - 10.1021/acsnano.5b04258
DO - 10.1021/acsnano.5b04258
M3 - Article
AN - SCOPUS:84948406884
SN - 1936-0851
VL - 9
SP - 10612
EP - 10620
JO - ACS Nano
JF - ACS Nano
IS - 11
ER -