Relationships between strain and band structure in Si(001) and Si(110) nanomembranes

C. Euaruksakul; F. Chen; B. Tanto; C. S. Ritz; D. M. Paskiewicz; F. J. Himpsel; D. E. Savage; Zheng Liu; Yugui Yao; Feng Liu; M. G. Lagally

doi:10.1103/PhysRevB.80.115323

Relationships between strain and band structure in Si(001) and Si(110) nanomembranes

C. Euaruksakul^*, F. Chen, B. Tanto, C. S. Ritz, D. M. Paskiewicz, F. J. Himpsel, D. E. Savage, Zheng Liu, Yugui Yao, Feng Liu, M. G. Lagally

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.

Original language	English
Article number	115323
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.80.115323
Publication status	Published - 24 Sept 2009
Externally published	Yes

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title = "Relationships between strain and band structure in Si(001) and Si(110) nanomembranes",

abstract = "The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.",

author = "C. Euaruksakul and F. Chen and B. Tanto and Ritz, {C. S.} and Paskiewicz, {D. M.} and Himpsel, {F. J.} and Savage, {D. E.} and Zheng Liu and Yugui Yao and Feng Liu and Lagally, {M. G.}",

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doi = "10.1103/PhysRevB.80.115323",

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T1 - Relationships between strain and band structure in Si(001) and Si(110) nanomembranes

AU - Euaruksakul, C.

AU - Chen, F.

AU - Tanto, B.

AU - Ritz, C. S.

AU - Paskiewicz, D. M.

AU - Himpsel, F. J.

AU - Savage, D. E.

AU - Liu, Zheng

AU - Yao, Yugui

AU - Liu, Feng

AU - Lagally, M. G.

PY - 2009/9/24

Y1 - 2009/9/24

N2 - The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.

AB - The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.

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U2 - 10.1103/PhysRevB.80.115323

DO - 10.1103/PhysRevB.80.115323

M3 - Article

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SN - 1098-0121

VL - 80

JO - Physical Review B - Condensed Matter and Materials Physics

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ER -

Relationships between strain and band structure in Si(001) and Si(110) nanomembranes

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