Regulation of the phase transition temperature of VO2 thin films deposited by reactive magnetron sputtering without doping

Meng Jiang; Xun Cao; Shanhu Bao; Huaijuan Zhou; Ping Jin

doi:10.1016/j.tsf.2014.04.090

Regulation of the phase transition temperature of VO₂ thin films deposited by reactive magnetron sputtering without doping

Meng Jiang, Xun Cao, Shanhu Bao, Huaijuan Zhou, Ping Jin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Thin films of phase pure VO₂(M) were fabricated on quartz glass by reactive magnetron sputtering. Structural, morphological, electrical and optical properties of the prepared samples were characterized. Interestingly, it was found that the phase transition temperature can be regulated to a large scale from 46 °C to 72 °C only by precisely controlling the oxygen partial pressure without any element doping. It was assumed that changes in the amount of free electrons and internal strain introduced by the tiny change in the oxygen-to-vanadium ratio contributed to the significantly regulated phase transition behavior.

Original language	English
Pages (from-to)	314-318
Number of pages	5
Journal	Thin Solid Films
Volume	562
DOIs	https://doi.org/10.1016/j.tsf.2014.04.090
Publication status	Published - 1 Jul 2014
Externally published	Yes

Keywords

Phase transition
Structure
Thermochromic
Thin films
Vanadium dioxide

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10.1016/j.tsf.2014.04.090

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Jiang, M., Cao, X., Bao, S., Zhou, H., & Jin, P. (2014). Regulation of the phase transition temperature of VO₂ thin films deposited by reactive magnetron sputtering without doping. Thin Solid Films, 562, 314-318. https://doi.org/10.1016/j.tsf.2014.04.090

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abstract = "Thin films of phase pure VO2(M) were fabricated on quartz glass by reactive magnetron sputtering. Structural, morphological, electrical and optical properties of the prepared samples were characterized. Interestingly, it was found that the phase transition temperature can be regulated to a large scale from 46 °C to 72 °C only by precisely controlling the oxygen partial pressure without any element doping. It was assumed that changes in the amount of free electrons and internal strain introduced by the tiny change in the oxygen-to-vanadium ratio contributed to the significantly regulated phase transition behavior.",

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AU - Jiang, Meng

AU - Cao, Xun

AU - Bao, Shanhu

AU - Zhou, Huaijuan

AU - Jin, Ping

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Thin films of phase pure VO2(M) were fabricated on quartz glass by reactive magnetron sputtering. Structural, morphological, electrical and optical properties of the prepared samples were characterized. Interestingly, it was found that the phase transition temperature can be regulated to a large scale from 46 °C to 72 °C only by precisely controlling the oxygen partial pressure without any element doping. It was assumed that changes in the amount of free electrons and internal strain introduced by the tiny change in the oxygen-to-vanadium ratio contributed to the significantly regulated phase transition behavior.

AB - Thin films of phase pure VO2(M) were fabricated on quartz glass by reactive magnetron sputtering. Structural, morphological, electrical and optical properties of the prepared samples were characterized. Interestingly, it was found that the phase transition temperature can be regulated to a large scale from 46 °C to 72 °C only by precisely controlling the oxygen partial pressure without any element doping. It was assumed that changes in the amount of free electrons and internal strain introduced by the tiny change in the oxygen-to-vanadium ratio contributed to the significantly regulated phase transition behavior.

KW - Phase transition

KW - Structure

KW - Thermochromic

KW - Thin films

KW - Vanadium dioxide

UR - http://www.scopus.com/inward/record.url?scp=84901780552&partnerID=8YFLogxK

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VL - 562

SP - 314

EP - 318

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Regulation of the phase transition temperature of VO₂ thin films deposited by reactive magnetron sputtering without doping

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Keywords

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