Rectification magnetoresistance device: Experimental realization and theoretical simulation

Kun Zhang; Qikun Huang; Yi Yan; Xiaolin Wang; Jing Wang; Shishou Kang; Yufeng Tian

doi:10.1063/1.4968784

Rectification magnetoresistance device: Experimental realization and theoretical simulation

Kun Zhang, Qikun Huang, Yi Yan, Xiaolin Wang, Jing Wang, Shishou Kang, Yufeng Tian^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

Original language	English
Article number	213503
Journal	Applied Physics Letters
Volume	109
Issue number	21
DOIs	https://doi.org/10.1063/1.4968784
Publication status	Published - 21 Nov 2016
Externally published	Yes

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abstract = "A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.",

author = "Kun Zhang and Qikun Huang and Yi Yan and Xiaolin Wang and Jing Wang and Shishou Kang and Yufeng Tian",

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T2 - Experimental realization and theoretical simulation

AU - Zhang, Kun

AU - Huang, Qikun

AU - Yan, Yi

AU - Wang, Xiaolin

AU - Wang, Jing

AU - Kang, Shishou

AU - Tian, Yufeng

PY - 2016/11/21

Y1 - 2016/11/21

N2 - A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

AB - A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

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JO - Applied Physics Letters

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Rectification magnetoresistance device: Experimental realization and theoretical simulation

Abstract

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