Real-Time In-Situ Optical Tracking of Oxygen Vacancy Migration in Memristors

Giuliana Di Martino*, Dean Kos, Weiwei Li, Bonan Zhu, Xuejing Wang, Haiyan Wang, Angela Demetriadou, Judith Driscoll, Jeremy Baumberg

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The switching mechanism of valence change memories involves the migration, accumulation and rearrangement of oxygen vacancies within a dielectric medium to change the electrical conductivity, and is triggered by an external applied potential. Here, resistive switches are constructed to exploit the high sensitivity to morphology at tightlyconfined plasmonic hotspots within the switching material. This gives a non-destructive technique to detect oxygen vacancy motion with nm-scale sensitivity using visible light.

Original languageEnglish
Pages (from-to)1421-1422
Number of pages2
JournalInternational Conference on Metamaterials, Photonic Crystals and Plasmonics
Publication statusPublished - 2019
Externally publishedYes
Event10th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2019 - Lisbon, Portugal
Duration: 23 Jul 201926 Jul 2019

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