Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

Junfeng Han; Liangqi Ouyang; Daming Zhuang; Cheng Liao; Jiang Liu; Ming Zhao; Li Mei Cha; M. P. Besland

doi:10.1016/j.matlet.2014.08.087

Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

Junfeng Han^*, Liangqi Ouyang, Daming Zhuang, Cheng Liao, Jiang Liu, Ming Zhao, Li Mei Cha, M. P. Besland

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSe_x layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.

Original language	English
Pages (from-to)	278-281
Number of pages	4
Journal	Materials Letters
Volume	136
DOIs	https://doi.org/10.1016/j.matlet.2014.08.087
Publication status	Published - 1 Dec 2014

Keywords

Interfaces
Raman
Solar energy materials
Sputtering
Thin films
XPS

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10.1016/j.matlet.2014.08.087

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title = "Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures",

abstract = "In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSex layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.",

keywords = "Interfaces, Raman, Solar energy materials, Sputtering, Thin films, XPS",

author = "Junfeng Han and Liangqi Ouyang and Daming Zhuang and Cheng Liao and Jiang Liu and Ming Zhao and Cha, {Li Mei} and Besland, {M. P.}",

year = "2014",

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doi = "10.1016/j.matlet.2014.08.087",

language = "English",

volume = "136",

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journal = "Materials Letters",

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T1 - Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

AU - Han, Junfeng

AU - Ouyang, Liangqi

AU - Zhuang, Daming

AU - Liao, Cheng

AU - Liu, Jiang

AU - Zhao, Ming

AU - Cha, Li Mei

AU - Besland, M. P.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSex layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.

AB - In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSex layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.

KW - Interfaces

KW - Raman

KW - Solar energy materials

KW - Sputtering

KW - Thin films

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=84907307190&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.08.087

DO - 10.1016/j.matlet.2014.08.087

M3 - Article

AN - SCOPUS:84907307190

SN - 0167-577X

VL - 136

SP - 278

EP - 281

JO - Materials Letters

JF - Materials Letters

ER -

Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

Abstract

Keywords

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