Preparation of ITO films deposited at room temperature by ion beam-assisted reactive evaporation

Zhi Nong Yu; Long Feng Xiang; Wei Xue; Hua Qing Wang; Wei Qiang Lu

Preparation of ITO films deposited at room temperature by ion beam-assisted reactive evaporation

Zhi Nong Yu^*, Long Feng Xiang, Wei Xue, Hua Qing Wang, Wei Qiang Lu

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature. Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved. The deposited films are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21 nm. Oxygen flux, evaporation rate and ion energy are the chief factors that affect the opto-electric properties of ITO films. Films with a resistivity as low as 2.4 × 10^-3 Ω·cm and the transmittance of above 82% in the visible range have been deposited at room temperature.

Original language	English
Pages (from-to)	924-927
Number of pages	4
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	27
Issue number	10
Publication status	Published - Oct 2007

Keywords

ITO films
Ion beam-assisted reactive deposition
Room temperature

Cite this

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title = "Preparation of ITO films deposited at room temperature by ion beam-assisted reactive evaporation",

abstract = "ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature. Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved. The deposited films are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21 nm. Oxygen flux, evaporation rate and ion energy are the chief factors that affect the opto-electric properties of ITO films. Films with a resistivity as low as 2.4 × 10-3 Ω·cm and the transmittance of above 82% in the visible range have been deposited at room temperature.",

keywords = "ITO films, Ion beam-assisted reactive deposition, Room temperature",

author = "Yu, {Zhi Nong} and Xiang, {Long Feng} and Wei Xue and Wang, {Hua Qing} and Lu, {Wei Qiang}",

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T1 - Preparation of ITO films deposited at room temperature by ion beam-assisted reactive evaporation

AU - Yu, Zhi Nong

AU - Xiang, Long Feng

AU - Xue, Wei

AU - Wang, Hua Qing

AU - Lu, Wei Qiang

PY - 2007/10

Y1 - 2007/10

N2 - ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature. Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved. The deposited films are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21 nm. Oxygen flux, evaporation rate and ion energy are the chief factors that affect the opto-electric properties of ITO films. Films with a resistivity as low as 2.4 × 10-3 Ω·cm and the transmittance of above 82% in the visible range have been deposited at room temperature.

AB - ITO films with high transmission and low resistivity have been prepared on glass substrate by ion beam-assisted reactive evaporation at room temperature. Experimental results showed that the deposition temperature can be decreased effectively and the photoelectric properties can be improved. The deposited films are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21 nm. Oxygen flux, evaporation rate and ion energy are the chief factors that affect the opto-electric properties of ITO films. Films with a resistivity as low as 2.4 × 10-3 Ω·cm and the transmittance of above 82% in the visible range have been deposited at room temperature.

KW - ITO films

KW - Ion beam-assisted reactive deposition

KW - Room temperature

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M3 - Article

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SN - 1001-0645

VL - 27

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JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 10

ER -

Preparation of ITO films deposited at room temperature by ion beam-assisted reactive evaporation

Abstract

Keywords

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