Preparation and electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route

Q. L. Zhao; M. S. Cao; J. Yuan; W. L. Song; R. Lu; D. W. Wang; D. Q. Zhang

doi:10.1016/j.jallcom.2009.11.062

Preparation and electrical properties of Pb(Zr_0.52Ti_0.48)O₃ thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route

Q. L. Zhao, M. S. Cao^*, J. Yuan, W. L. Song, R. Lu, D. W. Wang, D. Q. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Pb(Zr_0.52Ti_0.48)O₃ thick films embedded with ZnO nanowhiskers (ZnO_w-PZT) were successfully prepared on Pt/Cr/SiO₂/Si substrates by a hybrid sol-gel method via spin-coating ZnO_w suspension and PZT sol. Effects of annealing time and thickness on the corresponding orientation and crystallization of ZnO_w-PZT films are investigated. XRD and SEM results show that ZnO_w-PZT composite thick films have perovskite structure and high-quality film surface. The composite thick films also exhibit good ferroelectric and dielectric properties, which are close to those of PZT thick films. The remanent polarization, coercive field, dielectric constant and dielectric loss of ZnO_w-PZT thick film with thickness of 2 μm are 24 μC/cm², 177 kV/cm, 223 and 0.06, respectively. Moreover, the longitudinal piezoelectric coefficient is calculated to be 35 pm/V, which is comparable to that of PZT thick film.

Original language	English
Pages (from-to)	264-268
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	492
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2009.11.062
Publication status	Published - 4 Mar 2010

Keywords

Electrical properties
Ferroelectrics
Sol-gel processes
X-ray diffraction

Access to Document

10.1016/j.jallcom.2009.11.062

Cite this

@article{0bd18a3d00344e4789d4bcbe2f032154,

title = "Preparation and electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route",

abstract = "Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers (ZnOw-PZT) were successfully prepared on Pt/Cr/SiO2/Si substrates by a hybrid sol-gel method via spin-coating ZnOw suspension and PZT sol. Effects of annealing time and thickness on the corresponding orientation and crystallization of ZnOw-PZT films are investigated. XRD and SEM results show that ZnOw-PZT composite thick films have perovskite structure and high-quality film surface. The composite thick films also exhibit good ferroelectric and dielectric properties, which are close to those of PZT thick films. The remanent polarization, coercive field, dielectric constant and dielectric loss of ZnOw-PZT thick film with thickness of 2 μm are 24 μC/cm2, 177 kV/cm, 223 and 0.06, respectively. Moreover, the longitudinal piezoelectric coefficient is calculated to be 35 pm/V, which is comparable to that of PZT thick film.",

keywords = "Electrical properties, Ferroelectrics, Sol-gel processes, X-ray diffraction",

author = "Zhao, {Q. L.} and Cao, {M. S.} and J. Yuan and Song, {W. L.} and R. Lu and Wang, {D. W.} and Zhang, {D. Q.}",

year = "2010",

month = mar,

day = "4",

doi = "10.1016/j.jallcom.2009.11.062",

language = "English",

volume = "492",

pages = "264--268",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Preparation and electrical properties of Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route

AU - Zhao, Q. L.

AU - Cao, M. S.

AU - Yuan, J.

AU - Song, W. L.

AU - Lu, R.

AU - Wang, D. W.

AU - Zhang, D. Q.

PY - 2010/3/4

Y1 - 2010/3/4

N2 - Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers (ZnOw-PZT) were successfully prepared on Pt/Cr/SiO2/Si substrates by a hybrid sol-gel method via spin-coating ZnOw suspension and PZT sol. Effects of annealing time and thickness on the corresponding orientation and crystallization of ZnOw-PZT films are investigated. XRD and SEM results show that ZnOw-PZT composite thick films have perovskite structure and high-quality film surface. The composite thick films also exhibit good ferroelectric and dielectric properties, which are close to those of PZT thick films. The remanent polarization, coercive field, dielectric constant and dielectric loss of ZnOw-PZT thick film with thickness of 2 μm are 24 μC/cm2, 177 kV/cm, 223 and 0.06, respectively. Moreover, the longitudinal piezoelectric coefficient is calculated to be 35 pm/V, which is comparable to that of PZT thick film.

AB - Pb(Zr0.52Ti0.48)O3 thick films embedded with ZnO nanowhiskers (ZnOw-PZT) were successfully prepared on Pt/Cr/SiO2/Si substrates by a hybrid sol-gel method via spin-coating ZnOw suspension and PZT sol. Effects of annealing time and thickness on the corresponding orientation and crystallization of ZnOw-PZT films are investigated. XRD and SEM results show that ZnOw-PZT composite thick films have perovskite structure and high-quality film surface. The composite thick films also exhibit good ferroelectric and dielectric properties, which are close to those of PZT thick films. The remanent polarization, coercive field, dielectric constant and dielectric loss of ZnOw-PZT thick film with thickness of 2 μm are 24 μC/cm2, 177 kV/cm, 223 and 0.06, respectively. Moreover, the longitudinal piezoelectric coefficient is calculated to be 35 pm/V, which is comparable to that of PZT thick film.

KW - Electrical properties

KW - Ferroelectrics

KW - Sol-gel processes

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=76549131757&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2009.11.062

DO - 10.1016/j.jallcom.2009.11.062

M3 - Article

AN - SCOPUS:76549131757

SN - 0925-8388

VL - 492

SP - 264

EP - 268

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Preparation and electrical properties of Pb(Zr_0.52Ti_0.48)O₃ thick films embedded with ZnO nanowhiskers by a hybrid sol-gel route

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this