Yang, G., Shao, Y., Niu, J., Ma, X., Lu, C., Wei, W., Chuai, X., Wang, J., Cao, J., Huang, H., Xu, G., Shi, X., Ji, Z., Lu, N., Geng, D., Qi, J., Cao, Y., Liu, Z., Liu, L., ... Liu, M. (2020). Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. Nature Communications, 11(1), Article 659. https://doi.org/10.1038/s41467-020-14383-0
@article{555b4bf3b8d84309a1ee0c81eccb8793,
title = "Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals",
abstract = "In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.",
author = "Guanhua Yang and Yan Shao and Jiebin Niu and Xiaolei Ma and Congyan Lu and Wei Wei and Xichen Chuai and Jiawei Wang and Jingchen Cao and Hao Huang and Guangwei Xu and Xuewen Shi and Zhuoyu Ji and Nianduan Lu and Di Geng and Jing Qi and Yun Cao and Zhongliu Liu and Liwei Liu and Yuan Huang and Lei Liao and Weiqi Dang and Zhengwei Zhang and Yuan Liu and Xidong Duan and Jiezhi Chen and Zhiqiang Fan and Xiangwei Jiang and Yeliang Wang and Ling Li and Gao, {Hong Jun} and Xiangfeng Duan and Ming Liu",
note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41467-020-14383-0",
language = "English",
volume = "11",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",
}
Yang, G, Shao, Y, Niu, J, Ma, X, Lu, C, Wei, W, Chuai, X, Wang, J, Cao, J, Huang, H, Xu, G, Shi, X, Ji, Z, Lu, N, Geng, D, Qi, J, Cao, Y, Liu, Z, Liu, L, Huang, Y, Liao, L, Dang, W, Zhang, Z, Liu, Y, Duan, X, Chen, J, Fan, Z, Jiang, X, Wang, Y, Li, L, Gao, HJ, Duan, X & Liu, M 2020, 'Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals', Nature Communications, vol. 11, no. 1, 659. https://doi.org/10.1038/s41467-020-14383-0
TY - JOUR
T1 - Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
AU - Yang, Guanhua
AU - Shao, Yan
AU - Niu, Jiebin
AU - Ma, Xiaolei
AU - Lu, Congyan
AU - Wei, Wei
AU - Chuai, Xichen
AU - Wang, Jiawei
AU - Cao, Jingchen
AU - Huang, Hao
AU - Xu, Guangwei
AU - Shi, Xuewen
AU - Ji, Zhuoyu
AU - Lu, Nianduan
AU - Geng, Di
AU - Qi, Jing
AU - Cao, Yun
AU - Liu, Zhongliu
AU - Liu, Liwei
AU - Huang, Yuan
AU - Liao, Lei
AU - Dang, Weiqi
AU - Zhang, Zhengwei
AU - Liu, Yuan
AU - Duan, Xidong
AU - Chen, Jiezhi
AU - Fan, Zhiqiang
AU - Jiang, Xiangwei
AU - Wang, Yeliang
AU - Li, Ling
AU - Gao, Hong Jun
AU - Duan, Xiangfeng
AU - Liu, Ming
N1 - Publisher Copyright:
© 2020, The Author(s).
PY - 2020/12/1
Y1 - 2020/12/1
N2 - In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
AB - In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.
UR - http://www.scopus.com/inward/record.url?scp=85078840791&partnerID=8YFLogxK
U2 - 10.1038/s41467-020-14383-0
DO - 10.1038/s41467-020-14383-0
M3 - Article
C2 - 32005802
AN - SCOPUS:85078840791
SN - 2041-1723
VL - 11
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 659
ER -
