TY - JOUR
T1 - Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe
AU - Wang, Xiaoting
AU - Zhong, Fang
AU - Kang, Jun
AU - Liu, Can
AU - Lei, Ming
AU - Pan, Longfei
AU - Wang, Hailu
AU - Wang, Fang
AU - Zhou, Ziqi
AU - Cui, Yu
AU - Liu, Kaihui
AU - Wang, Jianlu
AU - Shen, Guozhen
AU - Shan, Chongxin
AU - Li, Jingbo
AU - Hu, Weida
AU - Wei, Zhongming
N1 - Publisher Copyright:
© 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2021/5
Y1 - 2021/5
N2 - Light polarization could provide critical visual information (e.g., surface roughness, geometry, or orientation) of the imaged objects beyond prevailing signals of intensity and wavelength. The polarization imaging technology thus has a large potential in broad fields such as object detection. However, intricate polarization coding is often required in these fields, and the existing complicated lensed system and polarizers have limited the miniaturization capabilities of the integrated imaging sensor. In this study, we demonstrate the utilization of two-dimensional (2D) in-plane anisotropic α-GeSe semiconductor to realize the polarizer-free polarization-sensitive visible/near-infrared (VIS-NIR) photodetector/imager. As the key part of the sensor system, this prototype Au/GeSe/Au photodetector exhibits impressive performances in terms of high sensitivity, broad spectral response, and fast-speed operation (∼103 AW−1 400–1050 nm, and 22.7/49.5 µs). Further, this device demonstrates unique polarization sensitivity in the spectral range of 690–1050 nm and broadband absorption of light polarized preferentially in the γ-direction, as predicted by the analysis of optical transition behavior in α-GeSe. Then we have successfully incorporated the 2D GeSe device into an imaging system for the polarization imaging and captured the polarization information of the radiant target with a high contrast ratio of 3.45 at 808 nm (NIR band). This proposed imager reveals the ability to sense dual-band polarization signals in the scene without polarizers and paves the way for polarimetric imaging sensor arrays for advanced applications.
AB - Light polarization could provide critical visual information (e.g., surface roughness, geometry, or orientation) of the imaged objects beyond prevailing signals of intensity and wavelength. The polarization imaging technology thus has a large potential in broad fields such as object detection. However, intricate polarization coding is often required in these fields, and the existing complicated lensed system and polarizers have limited the miniaturization capabilities of the integrated imaging sensor. In this study, we demonstrate the utilization of two-dimensional (2D) in-plane anisotropic α-GeSe semiconductor to realize the polarizer-free polarization-sensitive visible/near-infrared (VIS-NIR) photodetector/imager. As the key part of the sensor system, this prototype Au/GeSe/Au photodetector exhibits impressive performances in terms of high sensitivity, broad spectral response, and fast-speed operation (∼103 AW−1 400–1050 nm, and 22.7/49.5 µs). Further, this device demonstrates unique polarization sensitivity in the spectral range of 690–1050 nm and broadband absorption of light polarized preferentially in the γ-direction, as predicted by the analysis of optical transition behavior in α-GeSe. Then we have successfully incorporated the 2D GeSe device into an imaging system for the polarization imaging and captured the polarization information of the radiant target with a high contrast ratio of 3.45 at 808 nm (NIR band). This proposed imager reveals the ability to sense dual-band polarization signals in the scene without polarizers and paves the way for polarimetric imaging sensor arrays for advanced applications.
KW - 2D anisotropic semiconductors
KW - GeSe
KW - broadband polarimetric imaging
KW - polarization sensing detectors
UR - http://www.scopus.com/inward/record.url?scp=85103213312&partnerID=8YFLogxK
U2 - 10.1007/s40843-020-1535-9
DO - 10.1007/s40843-020-1535-9
M3 - Article
AN - SCOPUS:85103213312
SN - 2095-8226
VL - 64
SP - 1230
EP - 1237
JO - Science China Materials
JF - Science China Materials
IS - 5
ER -