TY - JOUR
T1 - Photoinduced topological phase transition in monolayer Ti2SiCO2
AU - Liu, Pu
AU - Cui, Chaoxi
AU - Yu, Zhi Ming
N1 - Publisher Copyright:
© 2024 American Physical Society.
PY - 2024/2/15
Y1 - 2024/2/15
N2 - The TiSiCO-family monolayer X2YCO2 (X=Ti, Zr, Hf; Y=Si, Ge) is a two-dimensional second-order topological insulator with unique valley-layer coupling in equilibrium condition. In this work, based on the four-band tight-binding (TB) model of monolayer Ti2SiCO2 (ML-TiSiCO) and the Floquet theory, we study the nonequilibrium properties of the ML-TiSiCO under a periodic field of laser and a gate-electric field. We find the interaction between the time-periodic polarized light and the electric field can lead to a variety of intriguing topological phase transitions. By driving the system with only circularly polarized light (CPL), a photoinduced topological phase transition occurs from a second-order topological insulator to a Chern insulator with a Chern number of C=±2, and the sign of the Chern number C is determined by the chirality of the incident light. Further adding a perpendicular electric field, we find that the ML-TiSiCO exhibits a rich phase diagram, consisting of Chern insulators with different Chern numbers and various topological semimetals. In contrast, since the linearly polarized light (LPL) does not break time-reversal symmetry, the Chern number of the system would not be changed under the irradiation of LPL. However, there still exist many topological phases, including second-order topological insulator, topological semi-Dirac, Dirac, and valley-polarized Dirac semimetals under the interaction between the LPL and the electric field. Our results not only enhance the understanding of the fundamental properties of ML-TiSiCO but also broaden the potential applications of such materials in optoelectronic devices.
AB - The TiSiCO-family monolayer X2YCO2 (X=Ti, Zr, Hf; Y=Si, Ge) is a two-dimensional second-order topological insulator with unique valley-layer coupling in equilibrium condition. In this work, based on the four-band tight-binding (TB) model of monolayer Ti2SiCO2 (ML-TiSiCO) and the Floquet theory, we study the nonequilibrium properties of the ML-TiSiCO under a periodic field of laser and a gate-electric field. We find the interaction between the time-periodic polarized light and the electric field can lead to a variety of intriguing topological phase transitions. By driving the system with only circularly polarized light (CPL), a photoinduced topological phase transition occurs from a second-order topological insulator to a Chern insulator with a Chern number of C=±2, and the sign of the Chern number C is determined by the chirality of the incident light. Further adding a perpendicular electric field, we find that the ML-TiSiCO exhibits a rich phase diagram, consisting of Chern insulators with different Chern numbers and various topological semimetals. In contrast, since the linearly polarized light (LPL) does not break time-reversal symmetry, the Chern number of the system would not be changed under the irradiation of LPL. However, there still exist many topological phases, including second-order topological insulator, topological semi-Dirac, Dirac, and valley-polarized Dirac semimetals under the interaction between the LPL and the electric field. Our results not only enhance the understanding of the fundamental properties of ML-TiSiCO but also broaden the potential applications of such materials in optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85185398256&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.109.075141
DO - 10.1103/PhysRevB.109.075141
M3 - Article
AN - SCOPUS:85185398256
SN - 2469-9950
VL - 109
JO - Physical Review B
JF - Physical Review B
IS - 7
M1 - 075141
ER -