Photoelectric properties of ZnO: In nanorods/SiO 2/Si heterostructure assembled in aqueous solution

Y. W. Chen; Y. C. Liu; S. X. Lu; C. S. Xu; C. L. Shao

doi:10.1007/s00340-006-2284-0

Photoelectric properties of ZnO: In nanorods/SiO ₂/Si heterostructure assembled in aqueous solution

Y. W. Chen, Y. C. Liu^*, S. X. Lu, C. S. Xu, C. L. Shao

^*Corresponding author for this work

School of Chemistry and Chemical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO ₂/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO ₂/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO ₂/n-Si heterostructure were investigated. ZnO:In/SiO ₂/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	84
Issue number	3
DOIs	https://doi.org/10.1007/s00340-006-2284-0
Publication status	Published - Sept 2006

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title = "Photoelectric properties of ZnO: In nanorods/SiO 2/Si heterostructure assembled in aqueous solution",

abstract = "In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO 2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO 2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO 2/n-Si heterostructure were investigated. ZnO:In/SiO 2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.",

author = "Chen, {Y. W.} and Liu, {Y. C.} and Lu, {S. X.} and Xu, {C. S.} and Shao, {C. L.}",

year = "2006",

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doi = "10.1007/s00340-006-2284-0",

language = "English",

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TY - JOUR

T1 - Photoelectric properties of ZnO

T2 - In nanorods/SiO 2/Si heterostructure assembled in aqueous solution

AU - Chen, Y. W.

AU - Liu, Y. C.

AU - Lu, S. X.

AU - Xu, C. S.

AU - Shao, C. L.

PY - 2006/9

Y1 - 2006/9

N2 - In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO 2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO 2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO 2/n-Si heterostructure were investigated. ZnO:In/SiO 2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.

AB - In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO 2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO 2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO 2/n-Si heterostructure were investigated. ZnO:In/SiO 2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.

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U2 - 10.1007/s00340-006-2284-0

DO - 10.1007/s00340-006-2284-0

M3 - Article

AN - SCOPUS:33746859815

SN - 0946-2171

VL - 84

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JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

Photoelectric properties of ZnO: In nanorods/SiO ₂/Si heterostructure assembled in aqueous solution

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