Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

Congpeng Zhao; Xingqiao Ma; Houbing Huang; Hasnain Mehdi Jafri; Zhuhong Liu; Long Qing Chen

doi:10.1109/LMAG.2017.2664720

Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

Congpeng Zhao, Xingqiao Ma^*, Houbing Huang, Hasnain Mehdi Jafri, Zhuhong Liu, Long Qing Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

Original language	English
Article number	7842593
Journal	IEEE Magnetics Letters
Volume	8
DOIs	https://doi.org/10.1109/LMAG.2017.2664720
Publication status	Published - 2017
Externally published	Yes

Keywords

Spin electronics
magnetostriction
phase-field simulation
spin torque
strain-Assisted magnetization flipping

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10.1109/LMAG.2017.2664720

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title = "Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction",

abstract = "We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.",

keywords = "Spin electronics, magnetostriction, phase-field simulation, spin torque, strain-Assisted magnetization flipping",

author = "Congpeng Zhao and Xingqiao Ma and Houbing Huang and Jafri, {Hasnain Mehdi} and Zhuhong Liu and Chen, {Long Qing}",

note = "Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

year = "2017",

doi = "10.1109/LMAG.2017.2664720",

language = "English",

volume = "8",

journal = "IEEE Magnetics Letters",

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T1 - Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

AU - Zhao, Congpeng

AU - Ma, Xingqiao

AU - Huang, Houbing

AU - Jafri, Hasnain Mehdi

AU - Liu, Zhuhong

AU - Chen, Long Qing

PY - 2017

Y1 - 2017

N2 - We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

AB - We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

KW - Spin electronics

KW - magnetostriction

KW - phase-field simulation

KW - spin torque

KW - strain-Assisted magnetization flipping

UR - http://www.scopus.com/inward/record.url?scp=85016285282&partnerID=8YFLogxK

U2 - 10.1109/LMAG.2017.2664720

DO - 10.1109/LMAG.2017.2664720

M3 - Article

AN - SCOPUS:85016285282

SN - 1949-307X

VL - 8

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 7842593

ER -

Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

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Keywords

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