Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels

Le Weng, Shuo Zhang, Dan Kuang, Bin Liu, Xianwen Liu, Baiqi Jiang, Guangchen Zhang, Zongchi Bao, Ce Ning, Dawei Shi, Jian Guo, Guangcai Yuan, Zhinong Yu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We present a dual active layer structure composed of indium-zinc oxide (InZnO) and indium-magnesium-zinc oxide (InMgZnO), which is fabricated using a simple solution process. By utilizing a heterojunction structure, combined with the high mobility of the front channel (InZnO) and the low OFF -state current of the back channel (InMgZnO), we are able to achieve thin-film transistor (TFT) devices with enhanced performance and greater stability. Finally, we are able to optimize the device by optimizing the front channel thickness and treating the heterojunction interface with oxygen plasma, achieving a mobility ( μ sat) of 5.94 cm2/(V s), a threshold voltage of 0.98 V, an I ON/IOFF ratio of 7.49× 108 , and a subthreshold swing (SS) of 325 mV/decade. Furthermore, the device maintains almost unchanged hysteresis voltage and exhibits high bias stability, which is demonstrated by the minimal threshold voltage variation of only 0.27 and -0.21 V under positive gate bias (PBS) and negative gate bias (NBS) for 1 h, respectively. The high electrical performance and stability of heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment, as well as the electron redistribution occurring at the heterojunction interface.

Original languageEnglish
Pages (from-to)4186-4193
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume70
Issue number8
DOIs
Publication statusPublished - 1 Aug 2023

Keywords

  • Amorphous indium-zinc oxide (a-InZnO) thin-film transistor (TFT)
  • heterojunction
  • indium-magnesium-zinc oxide (InMgZnO)
  • plasma treatment
  • solution-processed

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