Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

Dong Xiang; Huanxiong Xia; Wang Yang; Peng Mou

doi:10.1016/j.vacuum.2019.04.017

Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

Dong Xiang, Huanxiong Xia^*, Wang Yang, Peng Mou

^*Corresponding author for this work

School of Mechanical Engineering

Tsinghua University

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Large-area silicon-nitride thin films deposited from silane and ammonia by plasma-enhanced chemical vapor deposition are investigated experimentally in a 300 mm apparatus with a vertical showerhead. The responses of deposition rate and refractive index to the process parameters are found and discussed. The effects of showerhead configuration on the full-wafer deposition rate and refractive index are further examined, and the inherent non-uniformity is improved by using a proper convex showerhead. The residual gases are analyzed online, and a good correlation between the partial pressure of hydrogen and the deposition rate is found.

Original language	English
Pages (from-to)	172-178
Number of pages	7
Journal	Vacuum
Volume	165
DOIs	https://doi.org/10.1016/j.vacuum.2019.04.017
Publication status	Published - Jul 2019

Keywords

PECVD
Process parameter
Residual gas
Silicon-nitride
Thin film

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10.1016/j.vacuum.2019.04.017

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title = "Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition",

abstract = "Large-area silicon-nitride thin films deposited from silane and ammonia by plasma-enhanced chemical vapor deposition are investigated experimentally in a 300 mm apparatus with a vertical showerhead. The responses of deposition rate and refractive index to the process parameters are found and discussed. The effects of showerhead configuration on the full-wafer deposition rate and refractive index are further examined, and the inherent non-uniformity is improved by using a proper convex showerhead. The residual gases are analyzed online, and a good correlation between the partial pressure of hydrogen and the deposition rate is found.",

keywords = "PECVD, Process parameter, Residual gas, Silicon-nitride, Thin film",

author = "Dong Xiang and Huanxiong Xia and Wang Yang and Peng Mou",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

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doi = "10.1016/j.vacuum.2019.04.017",

language = "English",

volume = "165",

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T1 - Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

AU - Xiang, Dong

AU - Xia, Huanxiong

AU - Yang, Wang

AU - Mou, Peng

PY - 2019/7

Y1 - 2019/7

N2 - Large-area silicon-nitride thin films deposited from silane and ammonia by plasma-enhanced chemical vapor deposition are investigated experimentally in a 300 mm apparatus with a vertical showerhead. The responses of deposition rate and refractive index to the process parameters are found and discussed. The effects of showerhead configuration on the full-wafer deposition rate and refractive index are further examined, and the inherent non-uniformity is improved by using a proper convex showerhead. The residual gases are analyzed online, and a good correlation between the partial pressure of hydrogen and the deposition rate is found.

AB - Large-area silicon-nitride thin films deposited from silane and ammonia by plasma-enhanced chemical vapor deposition are investigated experimentally in a 300 mm apparatus with a vertical showerhead. The responses of deposition rate and refractive index to the process parameters are found and discussed. The effects of showerhead configuration on the full-wafer deposition rate and refractive index are further examined, and the inherent non-uniformity is improved by using a proper convex showerhead. The residual gases are analyzed online, and a good correlation between the partial pressure of hydrogen and the deposition rate is found.

KW - PECVD

KW - Process parameter

KW - Residual gas

KW - Silicon-nitride

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=85064402724&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2019.04.017

DO - 10.1016/j.vacuum.2019.04.017

M3 - Article

AN - SCOPUS:85064402724

SN - 0042-207X

VL - 165

SP - 172

EP - 178

JO - Vacuum

JF - Vacuum

ER -

Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

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Keywords

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