Oxidation behavior of ZrB 2-SiC-TaC ceramics

Yiguang Wang, Baisheng Ma, Lulu Li, Linan An*

*Corresponding author for this work

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Abstract

ZrB 2-SiC-TaC ceramics with different content of TaC were prepared by hot-pressing at 1800°C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200°C-1500°C in air. It was found that low concentration of TaC (10 vol%) deteriorated the oxidation resistance of ZrB 2-SiC, while high concentration of TaC (30 vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.

Original languageEnglish
Pages (from-to)374-378
Number of pages5
JournalJournal of the American Ceramic Society
Volume95
Issue number1
DOIs
Publication statusPublished - Jan 2012
Externally publishedYes

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Wang, Y., Ma, B., Li, L., & An, L. (2012). Oxidation behavior of ZrB 2-SiC-TaC ceramics. Journal of the American Ceramic Society, 95(1), 374-378. https://doi.org/10.1111/j.1551-2916.2011.04945.x