Oxidation behavior of ZrB 2-SiC-TaC ceramics

Yiguang Wang; Baisheng Ma; Lulu Li; Linan An

doi:10.1111/j.1551-2916.2011.04945.x

Oxidation behavior of ZrB ₂-SiC-TaC ceramics

Yiguang Wang, Baisheng Ma, Lulu Li, Linan An^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

ZrB ₂-SiC-TaC ceramics with different content of TaC were prepared by hot-pressing at 1800°C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200°C-1500°C in air. It was found that low concentration of TaC (10 vol%) deteriorated the oxidation resistance of ZrB ₂-SiC, while high concentration of TaC (30 vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.

Original language	English
Pages (from-to)	374-378
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	95
Issue number	1
DOIs	https://doi.org/10.1111/j.1551-2916.2011.04945.x
Publication status	Published - Jan 2012
Externally published	Yes

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abstract = "ZrB 2-SiC-TaC ceramics with different content of TaC were prepared by hot-pressing at 1800°C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200°C-1500°C in air. It was found that low concentration of TaC (10 vol%) deteriorated the oxidation resistance of ZrB 2-SiC, while high concentration of TaC (30 vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.",

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Oxidation behavior of ZrB ₂-SiC-TaC ceramics

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