Abstract
A new theoretical model is presented to investigate the amplification of strong ultrashort optical pulses in semiconductor optical amplifiers, while taking free-carrier absorption, stimulated emission, two-photon absorption, spectral hole burning and ultrafast nonlinear refraction into account. Based on this model, the pulsed four-wave mixing model is developed to further simulate the optical sampling based on four-wave mixing theory in semiconductor optical amplifiers. The influences of free-carrier absorption and two-photon absorption on sampling characteristics are emphasized. The simulation results are in agreement with reported experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 151-158 |
| Number of pages | 8 |
| Journal | Guangxue Xuebao/Acta Optica Sinica |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2008 |
Keywords
- Four-wave mixing
- Free-carrier absorption
- Nonlinear optics
- Optical sampling model
- Rate equations
- Two-photon absorption