Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

Y. W. Chen; Y. C. Liu; S. X. Lu; C. S. Xu; C. L. Shao; C. Wang; J. Y. Zhang; Y. M. Lu; D. Z. Shen; X. W. Fan

doi:10.1063/1.2009731

Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

Y. W. Chen, Y. C. Liu^*, S. X. Lu, C. S. Xu, C. L. Shao, C. Wang, J. Y. Zhang, Y. M. Lu, D. Z. Shen, X. W. Fan

^*Corresponding author for this work

School of Chemistry and Chemical Engineering

Research output: Contribution to journal › Article › peer-review

226 Citations (Scopus)

Abstract

Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2 O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.

Original language	English
Article number	134701
Journal	Journal of Chemical Physics
Volume	123
Issue number	13
DOIs	https://doi.org/10.1063/1.2009731
Publication status	Published - 3 Oct 2005

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@article{87bff94bc4974ed5ba01521417b54ca8,

title = "Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method",

abstract = "Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2 O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.",

author = "Chen, {Y. W.} and Liu, {Y. C.} and Lu, {S. X.} and Xu, {C. S.} and Shao, {C. L.} and C. Wang and Zhang, {J. Y.} and Lu, {Y. M.} and Shen, {D. Z.} and Fan, {X. W.}",

year = "2005",

month = oct,

day = "3",

doi = "10.1063/1.2009731",

language = "English",

volume = "123",

journal = "Journal of Chemical Physics",

issn = "0021-9606",

publisher = "American Institute of Physics",

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T1 - Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

AU - Chen, Y. W.

AU - Liu, Y. C.

AU - Lu, S. X.

AU - Xu, C. S.

AU - Shao, C. L.

AU - Wang, C.

AU - Zhang, J. Y.

AU - Lu, Y. M.

AU - Shen, D. Z.

AU - Fan, X. W.

PY - 2005/10/3

Y1 - 2005/10/3

N2 - Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2 O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.

AB - Self-assembled zinc oxide (ZnO) and indium-doping zinc oxide (ZnO:In) nanorod thin films were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel method. The samples were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), Raman-scattering spectroscopy, room-temperature photoluminescence (PL) spectra, and temperature-dependent PL spectra measurements. XRD and Raman spectra illustrated that there were no single In2 O3 phase in ZnO lattice after indium doping. The PL spectra of ZnO showed a strong UV emission band located at 394 nm and a very weak visible emission associated with deep-level defects. Indium incorporation induced the shift of optical band gap, quenching of the near-band-edge photoluminescence and enhanced LO mode multiphonon resonant Raman scattering in ZnO crystals at different temperatures. Abnormal temperature dependence of UV emission integrated intensity of ZnO and ZnO:In samples is observed. The local state emission peak of ZnO:In samples at 3.37 eV is observed in low-temperature PL spectra. The near-band-edge emission peak at room temperature was a mixture of excitons and impurity-related transitions for both of two samples.

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DO - 10.1063/1.2009731

M3 - Article

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SN - 0021-9606

VL - 123

JO - Journal of Chemical Physics

JF - Journal of Chemical Physics

IS - 13

M1 - 134701

ER -

Optical properties of ZnO and ZnO:In nanorods assembled by sol-gel method

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