Optical and electrical properties of Y                         2                         O                         3                          thin films prepared by ion beam assisted deposition

Jian Leng; Zhinong Yu; Yuqiong Li; Dongpu Zhang; Xiaoyi Liao; Wei Xue

doi:10.1016/j.apsusc.2010.03.054

Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition

Jian Leng, Zhinong Yu^*, Yuqiong Li, Dongpu Zhang, Xiaoyi Liao, Wei Xue

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Y ₂ O ₃ thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y ₂ O ₃ films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y ₂ O ₃ films without ion-beam bombardment had larger relative dielectric constant (ε _r ) and the ε _r decreased with time even over by 40%, while the ε _r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.

Original language	English
Pages (from-to)	5832-5836
Number of pages	5
Journal	Applied Surface Science
Volume	256
Issue number	20
DOIs	https://doi.org/10.1016/j.apsusc.2010.03.054
Publication status	Published - 1 Aug 2010

Keywords

Electrical properties
Ion beam assisted deposition (IBAD)
Optical properties
Y O

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Leng, J., Yu, Z., Li, Y., Zhang, D., Liao, X., & Xue, W. (2010). Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition Applied Surface Science, 256(20), 5832-5836. https://doi.org/10.1016/j.apsusc.2010.03.054

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title = " Optical and electrical properties of Y 2 O 3 thin films prepared by ion beam assisted deposition ",

abstract = " Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y 2 O 3 films without ion-beam bombardment had larger relative dielectric constant (ε r ) and the ε r decreased with time even over by 40%, while the ε r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.",

keywords = "Electrical properties, Ion beam assisted deposition (IBAD), Optical properties, Y O",

author = "Jian Leng and Zhinong Yu and Yuqiong Li and Dongpu Zhang and Xiaoyi Liao and Wei Xue",

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Leng, J, Yu, Z, Li, Y, Zhang, D, Liao, X & Xue, W 2010, ' Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition ', Applied Surface Science, vol. 256, no. 20, pp. 5832-5836. https://doi.org/10.1016/j.apsusc.2010.03.054

Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition . / Leng, Jian; Yu, Zhinong; Li, Yuqiong et al.
In: Applied Surface Science, Vol. 256, No. 20, 01.08.2010, p. 5832-5836.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Optical and electrical properties of Y 2 O 3 thin films prepared by ion beam assisted deposition

AU - Leng, Jian

AU - Yu, Zhinong

AU - Li, Yuqiong

AU - Zhang, Dongpu

AU - Liao, Xiaoyi

AU - Xue, Wei

PY - 2010/8/1

Y1 - 2010/8/1

N2 - Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y 2 O 3 films without ion-beam bombardment had larger relative dielectric constant (ε r ) and the ε r decreased with time even over by 40%, while the ε r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.

AB - Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y 2 O 3 films without ion-beam bombardment had larger relative dielectric constant (ε r ) and the ε r decreased with time even over by 40%, while the ε r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.

KW - Electrical properties

KW - Ion beam assisted deposition (IBAD)

KW - Optical properties

KW - Y O

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Leng J, Yu Z, Li Y, Zhang D, Liao X, Xue W. Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition Applied Surface Science. 2010 Aug 1;256(20):5832-5836. doi: 10.1016/j.apsusc.2010.03.054

Optical and electrical properties of Y ₂ O ₃ thin films prepared by ion beam assisted deposition

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