On the tungsten single crystal coatings achieved by chemical vapor transportation deposition

J. Q. Shi, Y. B. Shen, S. Y. Yao, P. J. Zhang, Q. Zhou, Y. Z. Guo, C. W. Tan*, X. D. Yu, Z. H. Nie, H. L. Ma, H. N. Cai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The tungsten single crystal has many excellent properties, namely a high melting point, high anti-creeping strength. Chemical vapor transportation deposition (CVTD) is a possible approach to achieve large-sized W single crystals for high-temperature application such as the cathode of a thermionic energy converter. In this work, CVTD W coatings were deposited on the monocrystalline molybdenum substrate (a tube with < 111 > axial crystalline orientation) using WCl6 as a transport medium. The microstructures of the coatings were investigated by a scanning electron microscope (SEM) and electron backscatter diffraction (EBSD). The as-deposited coatings are hexagonal prisms—rough surfaces perpendicular to < 110 > with alternating hill-like bulges and pits at the side edges of the prisms, and flat surfaces perpendicular to < 112 > with arc-shaped terraces at the side faces. This can be explained by two-dimensional nucleation -mediated lateral growth model. Some parts of the coatings contain hillocks of an exotic morphology (noted as “abnormal growth”). The authors hypothesize that the abnormal growth is likely caused by the defects of the Mo substrate, which facilitate W nucleation sites, cause orientation difference, and may even form boundaries in the coatings. A dislocation density of 106 to 107 (counts/cm2) was revealed by an etch-pit method and synchrotron X-ray diffraction. As the depositing temperature rises, the dislocation density decreases, and no sub-boundaries are found on samples deposited over 1300 °C, as a result of atom diffusion and dislocation climbing.

Original languageEnglish
Pages (from-to)36-44
Number of pages9
JournalMaterials Characterization
Volume122
DOIs
Publication statusPublished - 1 Dec 2016

Keywords

  • Chemical vapor transportation deposition
  • Microstructures
  • Tungsten single crystal

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