Abstract
The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.
Original language | English |
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Article number | 221902 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2 Jun 2014 |
Externally published | Yes |
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Wang, K., Li, X., Ma, B., Wang, Y., Zhang, L., & An, L. (2014). On electronic structure of polymer-derived amorphous silicon carbide ceramics. Applied Physics Letters, 104(22), Article 221902. https://doi.org/10.1063/1.4881139