Abstract
The step voltage generation process and mechanism in the step recovery diode (SRD) were analyzed and a new SRD model was proposed based on the parallel connection of a nonlinear capacitance and a PN diode. A short pulse generation circuit was simulated by the proposed model, the major parameters affecting the short pulse characteristics were studied, and the hardware of the circuit was realized. The measured pulse width was 230 ps and the measured pulse voltage was 3.3 V, both were in good agreement with the simulated results, thus verified the proposed model.
| Original language | English |
|---|---|
| Pages (from-to) | 173-176 |
| Number of pages | 4 |
| Journal | Jilin Daxue Xuebao (Gongxueban)/Journal of Jilin University (Engineering and Technology Edition) |
| Volume | 37 |
| Issue number | 1 |
| Publication status | Published - Jan 2007 |
Keywords
- Modeling
- Semiconductor
- Short pulse
- Step recovery diode (SRD)