Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure

Quan Hong; Jin Zhang; Sumei Wang; Zhuyuan Chu; Mengmeng Wang; Jiaxin Sun; Qitong Guo

doi:10.1364/AO.433564

Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure

Quan Hong, Jin Zhang, Sumei Wang^*, Zhuyuan Chu, Mengmeng Wang, Jiaxin Sun, Qitong Guo

^*Corresponding author for this work

School of Mechanical Engineering

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Utilizing the near-field enhancement effect of a polystyrene microsphere, direct ablation of nanohole arrays by a temporal-shaping femtosecond (fs) laser pulse is presented. The nanohole arrays, which are circular, regular, and free of cracks, were processed without extra post-processing, and their average diameter decreased gradually, as the double-pulse delay increased until 2500 fs. The simulated results by a plasma model and finite difference time domain solution demonstrate that the size decrease of the structure is attributed to the increase of the ablation threshold of silicon. Through fs laser near-field fabrication, the FWHM of nanoholes can be reduced to approximately 50 nm (λ/16) and even to 23 nm when using the second harmonic laser at a wavelength of 400 nm.

Original language	English
Pages (from-to)	7790-7797
Number of pages	8
Journal	Applied Optics
Volume	60
Issue number	25
DOIs	https://doi.org/10.1364/AO.433564
Publication status	Published - 1 Sept 2021

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title = "Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure",

abstract = "Utilizing the near-field enhancement effect of a polystyrene microsphere, direct ablation of nanohole arrays by a temporal-shaping femtosecond (fs) laser pulse is presented. The nanohole arrays, which are circular, regular, and free of cracks, were processed without extra post-processing, and their average diameter decreased gradually, as the double-pulse delay increased until 2500 fs. The simulated results by a plasma model and finite difference time domain solution demonstrate that the size decrease of the structure is attributed to the increase of the ablation threshold of silicon. Through fs laser near-field fabrication, the FWHM of nanoholes can be reduced to approximately 50 nm (λ/16) and even to 23 nm when using the second harmonic laser at a wavelength of 400 nm.",

author = "Quan Hong and Jin Zhang and Sumei Wang and Zhuyuan Chu and Mengmeng Wang and Jiaxin Sun and Qitong Guo",

note = "Publisher Copyright: {\textcopyright} 2021 Optical Society of America.",

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doi = "10.1364/AO.433564",

language = "English",

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T1 - Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure

AU - Hong, Quan

AU - Zhang, Jin

AU - Wang, Sumei

AU - Chu, Zhuyuan

AU - Wang, Mengmeng

AU - Sun, Jiaxin

AU - Guo, Qitong

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Utilizing the near-field enhancement effect of a polystyrene microsphere, direct ablation of nanohole arrays by a temporal-shaping femtosecond (fs) laser pulse is presented. The nanohole arrays, which are circular, regular, and free of cracks, were processed without extra post-processing, and their average diameter decreased gradually, as the double-pulse delay increased until 2500 fs. The simulated results by a plasma model and finite difference time domain solution demonstrate that the size decrease of the structure is attributed to the increase of the ablation threshold of silicon. Through fs laser near-field fabrication, the FWHM of nanoholes can be reduced to approximately 50 nm (λ/16) and even to 23 nm when using the second harmonic laser at a wavelength of 400 nm.

AB - Utilizing the near-field enhancement effect of a polystyrene microsphere, direct ablation of nanohole arrays by a temporal-shaping femtosecond (fs) laser pulse is presented. The nanohole arrays, which are circular, regular, and free of cracks, were processed without extra post-processing, and their average diameter decreased gradually, as the double-pulse delay increased until 2500 fs. The simulated results by a plasma model and finite difference time domain solution demonstrate that the size decrease of the structure is attributed to the increase of the ablation threshold of silicon. Through fs laser near-field fabrication, the FWHM of nanoholes can be reduced to approximately 50 nm (λ/16) and even to 23 nm when using the second harmonic laser at a wavelength of 400 nm.

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Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure

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