Luo, Q., Guo, Z., Huang, H., Zou, Q., Jiang, X., Zhang, S., Wang, H., Song, M., Zhang, B., Chen, H., Gu, H., Han, G., Yang, X., Zou, X., Wang, K. Y., Liu, Z., Hong, J., Ramesh, R., & You, L. (2019). Nanoelectromechanical switches by controlled switchable cracking. IEEE Electron Device Letters, 40(7), 1209-1212. Article 8718996. https://doi.org/10.1109/LED.2019.2917924
Luo, Qiang ; Guo, Zhe ; Huang, Houbing et al. / Nanoelectromechanical switches by controlled switchable cracking. In: IEEE Electron Device Letters. 2019 ; Vol. 40, No. 7. pp. 1209-1212.
@article{4bcb2e0013e445a7822e4cadf26354e2,
title = "Nanoelectromechanical switches by controlled switchable cracking",
abstract = "Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.",
keywords = "Nanoelectromechanical switch, controlled nanocrack, electric field control, nonvolatile memory",
author = "Qiang Luo and Zhe Guo and Houbing Huang and Qiming Zou and Xiangwei Jiang and Shuai Zhang and Hongjuan Wang and Min Song and Bao Zhang and Hong Chen and Haoshuang Gu and Genquan Han and Xiaofei Yang and Xuecheng Zou and Wang, {Kai You} and Zhiqi Liu and Jeongmin Hong and Ramamoorthy Ramesh and Long You",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2019",
month = jul,
doi = "10.1109/LED.2019.2917924",
language = "English",
volume = "40",
pages = "1209--1212",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}
Luo, Q, Guo, Z, Huang, H, Zou, Q, Jiang, X, Zhang, S, Wang, H, Song, M, Zhang, B, Chen, H, Gu, H, Han, G, Yang, X, Zou, X, Wang, KY, Liu, Z, Hong, J, Ramesh, R & You, L 2019, 'Nanoelectromechanical switches by controlled switchable cracking', IEEE Electron Device Letters, vol. 40, no. 7, 8718996, pp. 1209-1212. https://doi.org/10.1109/LED.2019.2917924
Nanoelectromechanical switches by controlled switchable cracking. / Luo, Qiang; Guo, Zhe
; Huang, Houbing et al.
In:
IEEE Electron Device Letters, Vol. 40, No. 7, 8718996, 07.2019, p. 1209-1212.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Nanoelectromechanical switches by controlled switchable cracking
AU - Luo, Qiang
AU - Guo, Zhe
AU - Huang, Houbing
AU - Zou, Qiming
AU - Jiang, Xiangwei
AU - Zhang, Shuai
AU - Wang, Hongjuan
AU - Song, Min
AU - Zhang, Bao
AU - Chen, Hong
AU - Gu, Haoshuang
AU - Han, Genquan
AU - Yang, Xiaofei
AU - Zou, Xuecheng
AU - Wang, Kai You
AU - Liu, Zhiqi
AU - Hong, Jeongmin
AU - Ramesh, Ramamoorthy
AU - You, Long
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2019/7
Y1 - 2019/7
N2 - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.
AB - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.
KW - Nanoelectromechanical switch
KW - controlled nanocrack
KW - electric field control
KW - nonvolatile memory
UR - http://www.scopus.com/inward/record.url?scp=85068104650&partnerID=8YFLogxK
U2 - 10.1109/LED.2019.2917924
DO - 10.1109/LED.2019.2917924
M3 - Article
AN - SCOPUS:85068104650
SN - 0741-3106
VL - 40
SP - 1209
EP - 1212
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
M1 - 8718996
ER -
Luo Q, Guo Z, Huang H, Zou Q, Jiang X, Zhang S et al. Nanoelectromechanical switches by controlled switchable cracking. IEEE Electron Device Letters. 2019 Jul;40(7):1209-1212. 8718996. doi: 10.1109/LED.2019.2917924
