Nanoelectromechanical switches by controlled switchable cracking

Qiang Luo; Zhe Guo; Houbing Huang; Qiming Zou; Xiangwei Jiang; Shuai Zhang; Hongjuan Wang; Min Song; Bao Zhang; Hong Chen; Haoshuang Gu; Genquan Han; Xiaofei Yang; Xuecheng Zou; Kai You Wang; Zhiqi Liu; Jeongmin Hong; Ramamoorthy Ramesh; Long You

doi:10.1109/LED.2019.2917924

Nanoelectromechanical switches by controlled switchable cracking

Qiang Luo, Zhe Guo, Houbing Huang, Qiming Zou, Xiangwei Jiang, Shuai Zhang, Hongjuan Wang, Min Song, Bao Zhang, Hong Chen, Haoshuang Gu, Genquan Han, Xiaofei Yang, Xuecheng Zou, Kai You Wang, Zhiqi Liu, Jeongmin Hong, Ramamoorthy Ramesh, Long You^*

^*Corresponding author for this work

Advanced Research Institute of Multidisciplinary Science

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>10⁷) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.

Original language	English
Article number	8718996
Pages (from-to)	1209-1212
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1109/LED.2019.2917924
Publication status	Published - Jul 2019

Keywords

Nanoelectromechanical switch
controlled nanocrack
electric field control
nonvolatile memory

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10.1109/LED.2019.2917924

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Luo, Q., Guo, Z., Huang, H., Zou, Q., Jiang, X., Zhang, S., Wang, H., Song, M., Zhang, B., Chen, H., Gu, H., Han, G., Yang, X., Zou, X., Wang, K. Y., Liu, Z., Hong, J., Ramesh, R., & You, L. (2019). Nanoelectromechanical switches by controlled switchable cracking. IEEE Electron Device Letters, 40(7), 1209-1212. Article 8718996. https://doi.org/10.1109/LED.2019.2917924

@article{4bcb2e0013e445a7822e4cadf26354e2,

title = "Nanoelectromechanical switches by controlled switchable cracking",

abstract = "Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.",

keywords = "Nanoelectromechanical switch, controlled nanocrack, electric field control, nonvolatile memory",

author = "Qiang Luo and Zhe Guo and Houbing Huang and Qiming Zou and Xiangwei Jiang and Shuai Zhang and Hongjuan Wang and Min Song and Bao Zhang and Hong Chen and Haoshuang Gu and Genquan Han and Xiaofei Yang and Xuecheng Zou and Wang, {Kai You} and Zhiqi Liu and Jeongmin Hong and Ramamoorthy Ramesh and Long You",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = jul,

doi = "10.1109/LED.2019.2917924",

language = "English",

volume = "40",

pages = "1209--1212",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Nanoelectromechanical switches by controlled switchable cracking

AU - Luo, Qiang

AU - Guo, Zhe

AU - Huang, Houbing

AU - Zou, Qiming

AU - Jiang, Xiangwei

AU - Zhang, Shuai

AU - Wang, Hongjuan

AU - Song, Min

AU - Zhang, Bao

AU - Chen, Hong

AU - Gu, Haoshuang

AU - Han, Genquan

AU - Yang, Xiaofei

AU - Zou, Xuecheng

AU - Wang, Kai You

AU - Liu, Zhiqi

AU - Hong, Jeongmin

AU - Ramesh, Ramamoorthy

AU - You, Long

PY - 2019/7

Y1 - 2019/7

N2 - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.

AB - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic.

KW - Nanoelectromechanical switch

KW - controlled nanocrack

KW - electric field control

KW - nonvolatile memory

UR - http://www.scopus.com/inward/record.url?scp=85068104650&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2917924

DO - 10.1109/LED.2019.2917924

M3 - Article

AN - SCOPUS:85068104650

SN - 0741-3106

VL - 40

SP - 1209

EP - 1212

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 8718996

ER -

Nanoelectromechanical switches by controlled switchable cracking

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