Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

Xueqiang Zhang; Edward Lamere; Xinyu Liu; Jacek K. Furdyna; Sylwia Ptasinska

doi:10.1063/1.4874983

Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

Xueqiang Zhang, Edward Lamere, Xinyu Liu, Jacek K. Furdyna, Sylwia Ptasinska^*

^*Corresponding author for this work

University of Notre Dame

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O₂ dissociation.

Original language	English
Article number	181602
Journal	Applied Physics Letters
Volume	104
Issue number	18
DOIs	https://doi.org/10.1063/1.4874983
Publication status	Published - 5 May 2014
Externally published	Yes

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Zhang, X., Lamere, E., Liu, X., Furdyna, J. K., & Ptasinska, S. (2014). Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions. Applied Physics Letters, 104(18), Article 181602. https://doi.org/10.1063/1.4874983

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Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

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