Zhan, T., Sahara, K., Takeuchi, H., Yokogawa, R., Oda, K., Jin, Z., Deng, S., Tomita, M., Wu, Y. J., Xu, Y., Matsuki, T., Wang, H., Song, M., Guan, S., Ogura, A., & Watanabe, T. (2022). Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits. ACS applied materials & interfaces, 14(5), 7392-7404. https://doi.org/10.1021/acsami.1c20366
Zhan, Tianzhuo ; Sahara, Keita ; Takeuchi, Haruki et al. / Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits. In: ACS applied materials & interfaces. 2022 ; Vol. 14, No. 5. pp. 7392-7404.
@article{e925ab5372204bad97190c18f4ee1c29,
title = "Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits",
abstract = "Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management. In this study, various adhesion layers are employed to modify bonding at the Ru/SiO2 interface. The TBRs of film stacks are measured using the frequency-domain thermoreflectance technique. TiN and TaN with high nitrogen contents significantly reduce the TBR of the Ru/SiO2 interface compared to common Ti and Ta adhesion layers. The adhesion layer thickness, on the other hand, has only minor effect on TBR when the thickness is within 2-10 nm. Hard X-ray photoelectron spectroscopy of deeply buried layers and interfaces quantitatively reveals that the decrease in TBR is attributed to the enhanced bonding of interfaces adjacent to the TaN adhesion layer, probably due to the electron transfer between the atoms at two sides of the interface. Simulations by a three-dimensional electrothermal finite element method demonstrate that decreasing the TBR leads to a significantly smaller temperature increase in the Ru interconnects. Our findings highlight the importance of TBR in the thermal management of VLSI circuits and pave the way for Ru interconnects to replace the current Cu-based ones.",
keywords = "hard X-ray photoelectron spectroscopy, interfacial bonding, ruthenium interconnect, temperature increase, thermal boundary resistance",
author = "Tianzhuo Zhan and Keita Sahara and Haruki Takeuchi and Ryo Yokogawa and Kaito Oda and Zhicheng Jin and Shikang Deng and Motohiro Tomita and Wu, {Yen Ju} and Yibin Xu and Takeo Matsuki and Haidong Wang and Mengjie Song and Sujun Guan and Atsushi Ogura and Takanobu Watanabe",
note = "Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",
year = "2022",
month = feb,
day = "9",
doi = "10.1021/acsami.1c20366",
language = "English",
volume = "14",
pages = "7392--7404",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "5",
}
Zhan, T, Sahara, K, Takeuchi, H, Yokogawa, R, Oda, K, Jin, Z, Deng, S, Tomita, M, Wu, YJ, Xu, Y, Matsuki, T, Wang, H, Song, M, Guan, S, Ogura, A & Watanabe, T 2022, 'Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits', ACS applied materials & interfaces, vol. 14, no. 5, pp. 7392-7404. https://doi.org/10.1021/acsami.1c20366
Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits. / Zhan, Tianzhuo; Sahara, Keita; Takeuchi, Haruki et al.
In:
ACS applied materials & interfaces, Vol. 14, No. 5, 09.02.2022, p. 7392-7404.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits
AU - Zhan, Tianzhuo
AU - Sahara, Keita
AU - Takeuchi, Haruki
AU - Yokogawa, Ryo
AU - Oda, Kaito
AU - Jin, Zhicheng
AU - Deng, Shikang
AU - Tomita, Motohiro
AU - Wu, Yen Ju
AU - Xu, Yibin
AU - Matsuki, Takeo
AU - Wang, Haidong
AU - Song, Mengjie
AU - Guan, Sujun
AU - Ogura, Atsushi
AU - Watanabe, Takanobu
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/2/9
Y1 - 2022/2/9
N2 - Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management. In this study, various adhesion layers are employed to modify bonding at the Ru/SiO2 interface. The TBRs of film stacks are measured using the frequency-domain thermoreflectance technique. TiN and TaN with high nitrogen contents significantly reduce the TBR of the Ru/SiO2 interface compared to common Ti and Ta adhesion layers. The adhesion layer thickness, on the other hand, has only minor effect on TBR when the thickness is within 2-10 nm. Hard X-ray photoelectron spectroscopy of deeply buried layers and interfaces quantitatively reveals that the decrease in TBR is attributed to the enhanced bonding of interfaces adjacent to the TaN adhesion layer, probably due to the electron transfer between the atoms at two sides of the interface. Simulations by a three-dimensional electrothermal finite element method demonstrate that decreasing the TBR leads to a significantly smaller temperature increase in the Ru interconnects. Our findings highlight the importance of TBR in the thermal management of VLSI circuits and pave the way for Ru interconnects to replace the current Cu-based ones.
AB - Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management. In this study, various adhesion layers are employed to modify bonding at the Ru/SiO2 interface. The TBRs of film stacks are measured using the frequency-domain thermoreflectance technique. TiN and TaN with high nitrogen contents significantly reduce the TBR of the Ru/SiO2 interface compared to common Ti and Ta adhesion layers. The adhesion layer thickness, on the other hand, has only minor effect on TBR when the thickness is within 2-10 nm. Hard X-ray photoelectron spectroscopy of deeply buried layers and interfaces quantitatively reveals that the decrease in TBR is attributed to the enhanced bonding of interfaces adjacent to the TaN adhesion layer, probably due to the electron transfer between the atoms at two sides of the interface. Simulations by a three-dimensional electrothermal finite element method demonstrate that decreasing the TBR leads to a significantly smaller temperature increase in the Ru interconnects. Our findings highlight the importance of TBR in the thermal management of VLSI circuits and pave the way for Ru interconnects to replace the current Cu-based ones.
KW - hard X-ray photoelectron spectroscopy
KW - interfacial bonding
KW - ruthenium interconnect
KW - temperature increase
KW - thermal boundary resistance
UR - http://www.scopus.com/inward/record.url?scp=85124082638&partnerID=8YFLogxK
U2 - 10.1021/acsami.1c20366
DO - 10.1021/acsami.1c20366
M3 - Article
C2 - 35099170
AN - SCOPUS:85124082638
SN - 1944-8244
VL - 14
SP - 7392
EP - 7404
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 5
ER -
Zhan T, Sahara K, Takeuchi H, Yokogawa R, Oda K, Jin Z et al. Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits. ACS applied materials & interfaces. 2022 Feb 9;14(5):7392-7404. doi: 10.1021/acsami.1c20366