Modeling and simulation of high-efficiency GaAs PIN solar cells

Ali Imran; Muhammad Sulaman; Yong Song; Deborah Eric; Muhammad Noaman Zahid; Muhammad Yousaf; Muhammad Imran Saleem; Maoyuan Li; Duo Li

doi:10.1007/s10825-020-01583-6

Modeling and simulation of high-efficiency GaAs PIN solar cells

Ali Imran, Muhammad Sulaman^*, Yong Song^*, Deborah Eric, Muhammad Noaman Zahid, Muhammad Yousaf, Muhammad Imran Saleem, Maoyuan Li, Duo Li

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm² V⁻¹ s⁻¹ and 0.3k cm² V⁻¹ s⁻¹, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms⁻¹ for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

Original language	English
Pages (from-to)	310-316
Number of pages	7
Journal	Journal of Computational Electronics
Volume	20
Issue number	1
DOIs	https://doi.org/10.1007/s10825-020-01583-6
Publication status	Published - Feb 2021

Keywords

Lifetime
Mobility
Recombination
Solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1007/s10825-020-01583-6

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title = "Modeling and simulation of high-efficiency GaAs PIN solar cells",

abstract = "A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm2 V−1 s−1 and 0.3k cm2 V−1 s−1, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms−1 for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.",

keywords = "Lifetime, Mobility, Recombination, Solar cell",

author = "Ali Imran and Muhammad Sulaman and Yong Song and Deborah Eric and Zahid, {Muhammad Noaman} and Muhammad Yousaf and Saleem, {Muhammad Imran} and Maoyuan Li and Duo Li",

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AU - Imran, Ali

AU - Sulaman, Muhammad

AU - Song, Yong

AU - Eric, Deborah

AU - Zahid, Muhammad Noaman

AU - Yousaf, Muhammad

AU - Saleem, Muhammad Imran

AU - Li, Maoyuan

AU - Li, Duo

PY - 2021/2

Y1 - 2021/2

N2 - A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm2 V−1 s−1 and 0.3k cm2 V−1 s−1, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms−1 for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

AB - A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm2 V−1 s−1 and 0.3k cm2 V−1 s−1, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms−1 for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

KW - Lifetime

KW - Mobility

KW - Recombination

KW - Solar cell

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Modeling and simulation of high-efficiency GaAs PIN solar cells

Abstract

Keywords

UN SDGs

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