Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering

Z. Y. Zhong; T. Zhang

doi:10.1016/j.matlet.2013.01.025

Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering

Z. Y. Zhong^*, T. Zhang

^*Corresponding author for this work

South-Central University for Nationalities

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Titanium-doped zinc oxide (TZO) films were prepared on glass substrates by RF magnetron sputtering. The effect of Ti content on microstructure and optoelectronic properties of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, UV-visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented. The Ti content significantly affects the microstructure and optoelectronic properties of the films. The film with Ti dopant of 3 wt% has the largest grain size of 81.5 nm, the highest average visible transmittance of 88.7%, the lowest resistivity of 1.26×10^-3 Ω cm and the maximum figure of merit of 1.44×10^-2 Ω^-1. Furthermore, the optical bandgaps were determined by Tauc's law and observed to be an increasing tendency with the increment of the Ti content.

Original language	English
Pages (from-to)	237-239
Number of pages	3
Journal	Materials Letters
Volume	96
DOIs	https://doi.org/10.1016/j.matlet.2013.01.025
Publication status	Published - 2013
Externally published	Yes

Keywords

Microstructure
Optoelectronic properties
Thin films
ZnO

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10.1016/j.matlet.2013.01.025

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@article{1c294956858241be8362e207ea88ef20,

title = "Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering",

abstract = "Titanium-doped zinc oxide (TZO) films were prepared on glass substrates by RF magnetron sputtering. The effect of Ti content on microstructure and optoelectronic properties of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, UV-visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented. The Ti content significantly affects the microstructure and optoelectronic properties of the films. The film with Ti dopant of 3 wt% has the largest grain size of 81.5 nm, the highest average visible transmittance of 88.7%, the lowest resistivity of 1.26×10-3 Ω cm and the maximum figure of merit of 1.44×10-2 Ω-1. Furthermore, the optical bandgaps were determined by Tauc's law and observed to be an increasing tendency with the increment of the Ti content.",

keywords = "Microstructure, Optoelectronic properties, Thin films, ZnO",

author = "Zhong, {Z. Y.} and T. Zhang",

year = "2013",

doi = "10.1016/j.matlet.2013.01.025",

language = "English",

volume = "96",

pages = "237--239",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering

AU - Zhong, Z. Y.

AU - Zhang, T.

PY - 2013

Y1 - 2013

N2 - Titanium-doped zinc oxide (TZO) films were prepared on glass substrates by RF magnetron sputtering. The effect of Ti content on microstructure and optoelectronic properties of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, UV-visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented. The Ti content significantly affects the microstructure and optoelectronic properties of the films. The film with Ti dopant of 3 wt% has the largest grain size of 81.5 nm, the highest average visible transmittance of 88.7%, the lowest resistivity of 1.26×10-3 Ω cm and the maximum figure of merit of 1.44×10-2 Ω-1. Furthermore, the optical bandgaps were determined by Tauc's law and observed to be an increasing tendency with the increment of the Ti content.

AB - Titanium-doped zinc oxide (TZO) films were prepared on glass substrates by RF magnetron sputtering. The effect of Ti content on microstructure and optoelectronic properties of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, UV-visible spectrophotometer and four-point probe. The results show that all the films are polycrystalline and (002) oriented. The Ti content significantly affects the microstructure and optoelectronic properties of the films. The film with Ti dopant of 3 wt% has the largest grain size of 81.5 nm, the highest average visible transmittance of 88.7%, the lowest resistivity of 1.26×10-3 Ω cm and the maximum figure of merit of 1.44×10-2 Ω-1. Furthermore, the optical bandgaps were determined by Tauc's law and observed to be an increasing tendency with the increment of the Ti content.

KW - Microstructure

KW - Optoelectronic properties

KW - Thin films

KW - ZnO

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U2 - 10.1016/j.matlet.2013.01.025

DO - 10.1016/j.matlet.2013.01.025

M3 - Article

AN - SCOPUS:84874641085

SN - 0167-577X

VL - 96

SP - 237

EP - 239

JO - Materials Letters

JF - Materials Letters

ER -

Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering

Abstract

Keywords

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