Microscopic study of thermoelectric In-doped SnTe

Pengfei Nan; Ruibin Liu; Yunjie Chang; Hongbo Wu; Yumei Wang; Richeng Yu; Jun Shen; Wei Guo; Binghui Ge

doi:10.1088/1361-6528/aabb0f

Microscopic study of thermoelectric In-doped SnTe

Pengfei Nan, Ruibin Liu^*, Yunjie Chang, Hongbo Wu, Yumei Wang, Richeng Yu, Jun Shen, Wei Guo, Binghui Ge

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In₂Te₃. Through geometry phase analysis, a new phonon scattering mechanism is discussed.

Original language	English
Article number	26LT01
Journal	Nanotechnology
Volume	29
Issue number	26
DOIs	https://doi.org/10.1088/1361-6528/aabb0f
Publication status	Published - 27 Apr 2018

Keywords

HAADF
SnTe
geometry phase analysis
inversion domain

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10.1088/1361-6528/aabb0f

Cite this

Nan, P., Liu, R., Chang, Y., Wu, H., Wang, Y., Yu, R., Shen, J., Guo, W., & Ge, B. (2018). Microscopic study of thermoelectric In-doped SnTe. Nanotechnology, 29(26), Article 26LT01. https://doi.org/10.1088/1361-6528/aabb0f

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title = "Microscopic study of thermoelectric In-doped SnTe",

abstract = "SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.",

keywords = "HAADF, SnTe, geometry phase analysis, inversion domain",

author = "Pengfei Nan and Ruibin Liu and Yunjie Chang and Hongbo Wu and Yumei Wang and Richeng Yu and Jun Shen and Wei Guo and Binghui Ge",

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AU - Nan, Pengfei

AU - Liu, Ruibin

AU - Chang, Yunjie

AU - Wu, Hongbo

AU - Wang, Yumei

AU - Yu, Richeng

AU - Shen, Jun

AU - Guo, Wei

AU - Ge, Binghui

PY - 2018/4/27

Y1 - 2018/4/27

N2 - SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.

AB - SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.

KW - HAADF

KW - SnTe

KW - geometry phase analysis

KW - inversion domain

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DO - 10.1088/1361-6528/aabb0f

M3 - Article

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SN - 0957-4484

VL - 29

JO - Nanotechnology

JF - Nanotechnology

IS - 26

M1 - 26LT01

ER -

Microscopic study of thermoelectric In-doped SnTe

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Keywords

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