Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

H. B. Huang*, C. P. Zhao, X. Q. Ma

*Corresponding author for this work

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Abstract

We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

Original languageEnglish
Article number9271407
JournalAdvances in Condensed Matter Physics
Volume2016
DOIs
Publication statusPublished - 2016
Externally publishedYes

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Huang, H. B., Zhao, C. P., & Ma, X. Q. (2016). Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics, 2016, Article 9271407. https://doi.org/10.1155/2016/9271407