Metal film bridge with TSV-based 3D wafer level packaging

Yunlong Guo, Wenzhong Lou, Xuran Ding

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the design and reliability research of a metal film bridge used TSV-based three-dimensional wafer level packaging (3DWLP). To compare with metal film bridge based on traditional wire bonding, the vertical TSV interconnects perform a variety of advantages such as shorter transmission length, lower power consumption, higher integrated structure and anti-overload ability. The structure is fabricated using special micro-nano fabrication technology, and its characterization is analyzed by numerical calculation and simulation. The calculation is based on the energy conservation law and the simulation use a software called COMSOL Multiphysics. The results of two methods show TSV-based metal film bridge is reliable under the impact of instantaneous large current.

Original languageEnglish
Title of host publication2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages430-434
Number of pages5
ISBN (Electronic)9781467366953
DOIs
Publication statusPublished - 1 Jul 2015
Event10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 - Xi'an, China
Duration: 7 Apr 201511 Apr 2015

Publication series

Name2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Conference

Conference10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
Country/TerritoryChina
CityXi'an
Period7/04/1511/04/15

Keywords

  • 3D wafer level packaging
  • Metal film bridge
  • TSV

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