Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Xingyu Zhou, Qilin Hua, Wei Sha, Jiyuan Zhu, Ting Liu, Chunyan Jiang, Qi Guo, Liang Jing, Chunhua Du, Junyi Zhai*, Weiguo Hu*, Zhong Lin Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The advances in biological magnetoreception and microelectronics have promoted the vigorous development of interactive electronic devices capable of noncontact interaction and control via magnetic fields. Here, a magnetosensory power device (MPD) that integrates a magnetic film ((Fe90Co10)78Si12B10) unit into a cantilever-structured AlGaN/GaN-based high-electron-mobility-transistor is presented. The MPD is capable to not only sense external magnetic field, but also control device output power with the emulation of magnetoreception. Specifically, the device can achieve significant control of output power density (18.04 to 18.94 W mm−2) quasi-linearly with magnetic field stimuli (0–400 mT) at a gate bias of −5 V. In addition, the maximum output power density of the MPD can reach 85.8 W mm−2 when a gate bias of 1 V is applied. The simulation and experimental results show that MPD has excellent orientation and magnetic field sensing functions under 0–400 mT magnetic fields. With the intelligent capabilities of magnetic sense and output power control, such interactive electronic devices will have broad application prospects in the fields of artificial intelligence, advanced robotics, and human-machine interfaces.

Original languageEnglish
Article number2200941
JournalAdvanced Electronic Materials
Volume9
Issue number5
DOIs
Publication statusPublished - May 2023
Externally publishedYes

Keywords

  • AlGaN/GaN HEMT
  • cantilever structure
  • interactive electronics
  • magnetoreception
  • power device

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Zhou, X., Hua, Q., Sha, W., Zhu, J., Liu, T., Jiang, C., Guo, Q., Jing, L., Du, C., Zhai, J., Hu, W., & Wang, Z. L. (2023). Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics. Advanced Electronic Materials, 9(5), Article 2200941. https://doi.org/10.1002/aelm.202200941