Low-Threshold chip-scale aluminum nitride Raman laser

Xianwen Liu; Changzheng Sun; Bing Xiong; Jian Wang; Lai Wang; Yanjun Han; Zhibiao Hao; Hongtao Li; Yi Luo; Jianchang Yan; Tongbo Wei; Yun Zhang; Junxi Wang

Low-Threshold chip-scale aluminum nitride Raman laser

Xianwen Liu, Changzheng Sun, Bing Xiong, Jian Wang, Lai Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, Yi Luo, Jianchang Yan, Tongbo Wei, Yun Zhang, Junxi Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×10⁶. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm^-1 are observed for incident light with different polarization.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
Publication status	Published - 2 Dec 2016
Externally published	Yes
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 12 Sept 2016 → 15 Sept 2016

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	12/09/16 → 15/09/16

Keywords

Epitaxial aluminum nitride
High-quality microring
On-chip Raman laser
Stimulated Raman scattering

Cite this

Liu, X., Sun, C., Xiong, B., Wang, J., Wang, L., Han, Y., Hao, Z., Li, H., Luo, Y., Yan, J., Wei, T., Zhang, Y., & Wang, J. (2016). Low-Threshold chip-scale aluminum nitride Raman laser. In 2016 International Semiconductor Laser Conference, ISLC 2016 Article 7765720 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{927bdc76caad44e4b3392e6126325c6f,

title = "Low-Threshold chip-scale aluminum nitride Raman laser",

abstract = "Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.",

keywords = "Epitaxial aluminum nitride, High-quality microring, On-chip Raman laser, Stimulated Raman scattering",

author = "Xianwen Liu and Changzheng Sun and Bing Xiong and Jian Wang and Lai Wang and Yanjun Han and Zhibiao Hao and Hongtao Li and Yi Luo and Jianchang Yan and Tongbo Wei and Yun Zhang and Junxi Wang",

note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

month = dec,

day = "2",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",

address = "United States",

}

Liu, X, Sun, C, Xiong, B, Wang, J, Wang, L, Han, Y, Hao, Z, Li, H, Luo, Y, Yan, J, Wei, T, Zhang, Y & Wang, J 2016, Low-Threshold chip-scale aluminum nitride Raman laser. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765720, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 12/09/16.

Low-Threshold chip-scale aluminum nitride Raman laser. / Liu, Xianwen; Sun, Changzheng; Xiong, Bing et al.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765720 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low-Threshold chip-scale aluminum nitride Raman laser

AU - Liu, Xianwen

AU - Sun, Changzheng

AU - Xiong, Bing

AU - Wang, Jian

AU - Wang, Lai

AU - Han, Yanjun

AU - Hao, Zhibiao

AU - Li, Hongtao

AU - Luo, Yi

AU - Yan, Jianchang

AU - Wei, Tongbo

AU - Zhang, Yun

AU - Wang, Junxi

PY - 2016/12/2

Y1 - 2016/12/2

N2 - Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.

AB - Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.

KW - Epitaxial aluminum nitride

KW - High-quality microring

KW - On-chip Raman laser

KW - Stimulated Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=85010190705&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85010190705

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Low-Threshold chip-scale aluminum nitride Raman laser

Abstract

Publication series

Conference

Keywords

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