Low pressure chemical vapor deposition of niobium coating on silicon carbide

Qiaomu Liu*, Litong Zhang, Laifei Cheng, Jinling Liu, Yiguang Wang

*Corresponding author for this work

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Abstract

Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl 5 . Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl 5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

Original languageEnglish
Pages (from-to)8611-8615
Number of pages5
JournalApplied Surface Science
Volume255
Issue number20
DOIs
Publication statusPublished - 30 Jul 2009
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Growth mechanism
  • Growth rate
  • Niobium
  • Thermodynamic calculation

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Liu, Q., Zhang, L., Cheng, L., Liu, J., & Wang, Y. (2009). Low pressure chemical vapor deposition of niobium coating on silicon carbide. Applied Surface Science, 255(20), 8611-8615. https://doi.org/10.1016/j.apsusc.2009.06.037