Low-Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs

Xiao Cui, Keyu Ji, Taiping Zhang, Bingjun Wang, Wei Sha, Zilong Dong, Yuanhong Shi, Chunsheng Jiang*, Qilin Hua*, Weiguo Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

AlGaN/GaN-based high electron mobility transistors (HEMTs) are ideal candidates for power electronics in consumer, industrial, and space applications. Attributed to their excellent performance in electrical output and chemical stability, AlGaN/GaN HEMTs enable tolerant neutron irradiation in harsh environments. Different from high-fluence irradiation-induced device failure, the investigation of low-fluence neutron irradiation is of great significance to understand the early damage mechanism of HEMTs. Here, the modulated electrical properties are presented of AlGaN/GaN HEMTs under low-fluence neutron irradiations of 4.5 × 1013 and 6.0 × 1013 cm−2. After irradiation, the electrical characteristics of the samples are carefully measured, the output performance of different irradiated devices shows a similar change trend, i.e., almost no changes or only decreased slightly (≤14%) near the knee voltage. For leakage current, the samples irradiated with different fluences show different characteristics, including a slight decrease with the fluence of 4.5 × 1013 cm−2, and a slight increase with the fluence of 6.0 × 1013 cm−2. To further investigate the internal mechanisms, the performance changes are also simulated of the device by using Crosslight software. According to the measurements, it is concluded that the low-fluence neutron irradiation will initially affect the 2DEG mobility and the surface states of the HEMTs.

Original languageEnglish
Article number2200872
JournalAdvanced Materials Technologies
Volume8
Issue number6
DOIs
Publication statusPublished - 24 Mar 2023
Externally publishedYes

Keywords

  • HEMTs
  • defects
  • electrical performance
  • low-fluence
  • neutron irradiation

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Cui, X., Ji, K., Zhang, T., Wang, B., Sha, W., Dong, Z., Shi, Y., Jiang, C., Hua, Q., & Hu, W. (2023). Low-Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs. Advanced Materials Technologies, 8(6), Article 2200872. https://doi.org/10.1002/admt.202200872