TY - JOUR
T1 - Low-Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs
AU - Cui, Xiao
AU - Ji, Keyu
AU - Zhang, Taiping
AU - Wang, Bingjun
AU - Sha, Wei
AU - Dong, Zilong
AU - Shi, Yuanhong
AU - Jiang, Chunsheng
AU - Hua, Qilin
AU - Hu, Weiguo
N1 - Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/3/24
Y1 - 2023/3/24
N2 - AlGaN/GaN-based high electron mobility transistors (HEMTs) are ideal candidates for power electronics in consumer, industrial, and space applications. Attributed to their excellent performance in electrical output and chemical stability, AlGaN/GaN HEMTs enable tolerant neutron irradiation in harsh environments. Different from high-fluence irradiation-induced device failure, the investigation of low-fluence neutron irradiation is of great significance to understand the early damage mechanism of HEMTs. Here, the modulated electrical properties are presented of AlGaN/GaN HEMTs under low-fluence neutron irradiations of 4.5 × 1013 and 6.0 × 1013 cm−2. After irradiation, the electrical characteristics of the samples are carefully measured, the output performance of different irradiated devices shows a similar change trend, i.e., almost no changes or only decreased slightly (≤14%) near the knee voltage. For leakage current, the samples irradiated with different fluences show different characteristics, including a slight decrease with the fluence of 4.5 × 1013 cm−2, and a slight increase with the fluence of 6.0 × 1013 cm−2. To further investigate the internal mechanisms, the performance changes are also simulated of the device by using Crosslight software. According to the measurements, it is concluded that the low-fluence neutron irradiation will initially affect the 2DEG mobility and the surface states of the HEMTs.
AB - AlGaN/GaN-based high electron mobility transistors (HEMTs) are ideal candidates for power electronics in consumer, industrial, and space applications. Attributed to their excellent performance in electrical output and chemical stability, AlGaN/GaN HEMTs enable tolerant neutron irradiation in harsh environments. Different from high-fluence irradiation-induced device failure, the investigation of low-fluence neutron irradiation is of great significance to understand the early damage mechanism of HEMTs. Here, the modulated electrical properties are presented of AlGaN/GaN HEMTs under low-fluence neutron irradiations of 4.5 × 1013 and 6.0 × 1013 cm−2. After irradiation, the electrical characteristics of the samples are carefully measured, the output performance of different irradiated devices shows a similar change trend, i.e., almost no changes or only decreased slightly (≤14%) near the knee voltage. For leakage current, the samples irradiated with different fluences show different characteristics, including a slight decrease with the fluence of 4.5 × 1013 cm−2, and a slight increase with the fluence of 6.0 × 1013 cm−2. To further investigate the internal mechanisms, the performance changes are also simulated of the device by using Crosslight software. According to the measurements, it is concluded that the low-fluence neutron irradiation will initially affect the 2DEG mobility and the surface states of the HEMTs.
KW - HEMTs
KW - defects
KW - electrical performance
KW - low-fluence
KW - neutron irradiation
UR - http://www.scopus.com/inward/record.url?scp=85147367290&partnerID=8YFLogxK
U2 - 10.1002/admt.202200872
DO - 10.1002/admt.202200872
M3 - Article
AN - SCOPUS:85147367290
SN - 2365-709X
VL - 8
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 6
M1 - 2200872
ER -